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QW-BSCXX

REV:

Comchip Technology CO., LTD.

Company reserves the right to improve product design , functions and reliability without notice.

Unit

Total capacitive charge

Total capacitance

nC

pF

Conditions

C

220

181

Parameter

Max.

Symbol

Min.

Forward voltage

V

1.7

2.5

Typ.

1.4

1.8

Reverse current

μA

200

100

20

10

C(V) dv

VR

0

11

25

22.5

21

20.5

RATING AND CHARACTERISTIC CURVES (CDBDSC3650-G)

Silicon Carbide Power Schottky Diode

40

80

100

200

0

160

0.01

0.1

1

10

100

1000

Fig.1 - Forward Characteristics

0

1

4

6

2.0

0

1.5

2.5

0.5

2

3

5

1.0

T =125°C

J

T =175°C

J

Fig.2 - Reverse Characteristics

0

0.010

0.040

0

200

400

800

0.020

0.030

100

300

600

500

700

0.015

0.025

0.035

0.005

T =175°C

J

T =125°C

J

20

60

120

140

180

Fig.3 - Current Derating

150

175

75

125

40

35

30

10

0

50

100

25

25

20

15

5

10% Duty

30% Duty

50% Duty

70% Duty

DC