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PI3B16224 Datasheet(PDF) 2 Page - Pericom Semiconductor Corporation |
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PI3B16224 Datasheet(HTML) 2 Page - Pericom Semiconductor Corporation |
2 / 3 page ![]() 2 PS8181E 09/10/04 PI3B16224 3.3V, 12-Bit to 24-Bit DeMux/Mux NanoSwitch™ 12345678901234567890123456789012123456789012345678901234567890121234567890123456789012345678901212345678901234567890123456789012123456789012 12345678901234567890123456789012123456789012345678901234567890121234567890123456789012345678901212345678901234567890123456789012123456789012 Notes: 1. This parameter is guaranteed but not tested on Propagation Delays. 2. The bus switch contributes no propagational delay other than the RC delay of the ON resistance of the switch and the load capacitance. The time constant for the switch alone is of the order of 0.25ns for 50pF load. Since this time constant is much smaller than the rise/fall times of typical driving signals, it adds very little propagational delay to the system. Propagational delay of the bus switch when used in a system is determined by the driving circuit on the driving side of the switch and its interaction with the load on the driven side. 3. See test circuit and waveforms. Notes: 1. Typical values are shown at VCC = 3.3V, +25°C ambient and maximum loading. Switching Electrical Characteristics(TA = –40ºC to +85ºC, VCC= 3.0 to 3.6V) s r e t e m a r a Pn o i t p i r c s e Ds n o i t i d n o C t s e T ) 1 ( . n i M. p y T ) 2 ( . x a Ms t i n U V H I e g a t l o V H G I H t u p n Il e v e L h g i H c i g o L d e e t n a r a u G0 . 2 V V L I e g a t l o V W O L t u p n Il e v e L w o L c i g o L d e e t n a r a u G5 . 0 –8 . 0 I H I t n e r r u C H G I H t u p n IV C C V ; . x a M = N I V = C C 1 ± A µ I L I t n e r r u C W O L t u p n IV C C V ; . x a M = N I =D N G1 ± I H Z O t n e r r u C t u p t u O e c n a d e p m I h g i H0 ≤ B , A ≤ V C C 1 ± V K I e g a t l o V e d o i D p m a l CV C C I , n i M = N I A m 8 1 – =7 . 0 –2 . 1 – V R N O e c n a t s i s e R n O h c t i w SV C C V , . n i M = N I I , V 0 . 0 = N O A m 2 1 =5 8 Ω R N O e c n a t s i s e R n O h c t i w SV C C V , . n i M = N I I , V 4 . 2 = N O A m 2 1 =0 15 1 C N I e c n a t i c a p a C t u p n IV N I z H M 1 = f , C ° 5 2 , V 0 =0 . 3 F p C N O e c n a t i c a p a C B / AV N I z H M 1 = f , C ° 5 2 , V 0 =0 . 5 2 I C C t n e c s e i u Q y l p p u S r e w o P 0 1 A µ DC Electrical Characteristics (Over the Operating Range, TA = –40ºC to +85ºC, VCC = 3.0 to 3.6V) Storage Temperature Range, TSTG ......................................... –65ºC to +150ºC Ambient Temperature with Power Applied ..................... –40ºC to +85ºC Supply Voltage Range, to Ground Potential .................... –0.5V to +4.6V Input Voltage Range .......................................................... –0.5V to +4.6V DC Output Current ......................................................................... 120mA Power Dissipation ............................................................................. 0.5W Note: Stresses greater than those listed under MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Maximum Ratings (Above which useful life may be impaired. For user guidelines, not tested.) s r e t e m a r a Pn o i t p i r c s e Ds n o i t i d n o C t s e T 4 2 2 6 1 B 3 I P s t i n U . m o C . n i M. x a M t H L P x B x o t x A y a l e D n o i t a g a p o r PCL R , F p 0 5 = L s m h o 0 0 5 = ) 3 , 2 , 1 ( –0 5 2s p t E P e l b a n E s u B CL R , F p 0 5 = L s m h o 0 0 5 = ) 3 ( 15 . 4 s n t D P e l b a s i D s u B 10 . 5 tM e m i t k a e r b - e r o f e b - e k a MCL R , F p 0 5 = L s m h o 0 0 5 = ) 1 ( 02 |
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