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NTE36 Datasheet(PDF) 1 Page - NTE Electronics

Part No. NTE36
Description  Silicon Complementary Transistors AF Power Amplifier, High Current Switch
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Manufacturer  NTE [NTE Electronics]
Direct Link  http://www.nteinc.com
Logo NTE - NTE Electronics

NTE36 Datasheet(HTML) 1 Page - NTE Electronics

  NTE36 Datasheet HTML 1Page - NTE Electronics NTE36 Datasheet HTML 2Page - NTE Electronics  
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NTE36 (NPN) & NTE37 (PNP)
Silicon Complementary Transistors
AF Power Amplifier, High Current Switch
Description:
The NTE36 (NPN) and NTE37 (PNP) are silicon complementary transistors in a TO3P type case de-
signed for AF power amplifier and high current switching applications.
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Emitter Voltage, VCEO
140V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Base Voltage, VCBO
160V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, VEBO
6V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, IC
Continuous
12A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak
15A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (TC = +25°C), PD
100W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, TJ
+150
°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg
–40
° to +150°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
ICEO
VCB = 80V, IE = 0
0.1
mA
Emitter Cutoff Current
IEBO
VBE = 4V, IC = 0
0.1
mA
DC Current Gain
hFE1
VCE = 5V, IC = 1A
60
200
hFE2
VCE = 5V, IC = 6A
20
Gain Bandwidth Product
fT
VCE = 5V, IC = 1A
15
MHz
Output Capacitance
NTE36
NTE37
Cob
VCB = 10V, f = 1MHz
210
300
pF
Base–Emitter Voltage
VBE
VCE = 5V, IC = 1A
1.5
V
Collector–Emitter Saturation Voltage
NTE36
NTE37
VCE(sat)
IC = 5A, IB = 500mA
0.6
1.1
2.5
V


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