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FZT957_16 Datasheet(PDF) 4 Page - Diodes Incorporated

Part No. FZT957_16
Description  PNP MEDIUM POWER TRANSISTOR
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Maker  DIODES [Diodes Incorporated]
Homepage  http://www.diodes.com
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FZT957
Datasheet Number: DS33191 Rev. 7 - 2
4 of 7
www.diodes.com
December 2016
© Diodes Incorporated
FZT957
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
BVCBO
-330
-440
V
IC = -100µA
Collector-Emitter Breakdown Voltage
BVCER
-330
-440
V
IC = -1µA, RB 1kΩ
Collector-Emitter Breakdown Voltage (Note 10)
BVCEO
-300
-400
V
IC = -10mA
Emitter-Base Breakdown Voltage
BVEBO
-7
-8
V
IE = -100µA
Collector Cut-Off Current
ICBO
<1
-50
-1
nA
µA
VCB = -300V; R ≤1kΩ
VCB = -300V, TA = +100°C
Collector Cut-Off Current
ICER
<1
-50
-1
nA
µA
VCE = -300V
VCE = -300V, TA = +100°C
Emitter Cut-Off Current
IEBO
<1
-10
nA
VEB = -6V
DC Current Transfer Static Ratio (Note 10)
hFE
100
200
-
IC = -10mA, VCE = -10V
100
200
300
IC = -0.5A, VCE = -10V
90
170
IC = -1A, VCE = -10V
10
IC = -2A, VCE = -10V
Collector-Emitter Saturation Voltage (Note 10)
VCE(sat)
-60
-100
mV
IC = -100mA, IB = -10mA
-110
-165
IC = -500mA, IB = -100mA
-170
-240
IC = -1A, IB = -300mA
Base-Emitter Saturation Voltage (Note 10)
VBE(sat)
-910
-1,150
mV
IC = -1A, IB = -300mA
Base-Emitter Turn-on Voltage (Note 10)
VBE(on)
-750
-1,020
mV
IC = -1A, VCE = -10V
Transitional Frequency
fT
85
MHz
IC = -100mA, VCE = -10V,
f = 50MHz
Output Capacitance
Cobo
23
pF
VCB = -20V, f = 1MHz
Switching Time
tON
108
ns
VCC = -100V, IC = -500mA,
-IB1 = IB2 = -50mA
tOFF
2,500
Note:
10. Measured under pulsed conditions. Pulse width
≤ 300μs. Duty cycle ≤ 2%.




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