FEDR27V852E-01-01

1Semiconductor

MR27V852E

5/13

ELECTRICAL CHARACTERISTICS

DC Characteristics

(V

parameter

Symbol

Condition

Min.

Typ.

Max.

Unit

Input leakage current

I

LI

V

——

10

µA

Output leakage current

I

LO

V

——

10

µA

I

CCSC

CE = V

CC

——

50

µA

V

(Standby)

I

CCST

CE = V

IH

——

1

m

Α

V

(Read)

I

CCA

CE = V

tc = 100 ns

——

80

mA

V

I

PP

V

——

10

µA

Input “H” level

V

IH

—2.2

—

V

V

Input “L” level

V

IL

—

–0.5

∗∗

—0.6

V

Output “H” level

V

OH

I

2.4

—

—

V

Output “L” level

V

OL

I

—

—

0.4

V

Voltage is relative to V

∗ : Vcc+1.5 V(Max.) when pulse width of overshoot is less than 10 ns.

∗∗ : -1.5 V(Min.) when pulse width of undershoot is less than 10 ns.

AC Characteristics

(V

Parameter

Symbol

Condition

Min.

Max.

Unit

Address cycle time

t

C

—

100

—

ns

Address access time

t

ACC

CE = OE = V

IL

—

100

ns

Page cycle time

t

PC

—30

—

ns

Page access time

t

PAC

—

—

30

ns

CE access time

t

CE

OE = V

IL

—

100

ns

OE access time

t

OE

CE = V

IL

—30

ns

t

CHZ

OE = V

IL

030

ns

Output disable time

t

OHZ

CE = V

IL

025

ns

Output hold time

t

OH

CE = OE = V

IL

0—

ns

Measurement conditions