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F4-75R07W2H3-B51 Datasheet(PDF) 5 Page - Infineon Technologies AG |
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F4-75R07W2H3-B51 Datasheet(HTML) 5 Page - Infineon Technologies AG |
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5 / 14 page  5 TechnischeInformation/TechnicalInformation F4-75R07W2H3_B51 IGBT-Modul IGBT-Module preparedby:MB approvedby:AKDA dateofpublication:2014-10-15 revision:2.0 VorläufigeDaten PreliminaryData MOSFET/MOSFET HöchstzulässigeWerte/MaximumRatedValues Drain-Source-Sperrspannung Drain-sourcebreakdownvoltage Tvj = 25°C VDSS 650 V Drain-Gleichstrom DCdraincurrent TC = 100°C TC = 25°C ID nom ID 30 50 A A GepulsterDrainstrom,tplimitiertdurch Tjmax Pulseddraincurrent,tplimitedbyTjmax ID puls 100 A Gesamt-Verlustleistung Totalpowerdissipation TC = 25°C Ptot 520 W Gate-Source-Spitzenspannung Gate-sourcepeakvoltage VGSS +/-20 V CharakteristischeWerte/CharacteristicValues min. typ. max. Einschaltwiderstand Drain-sourceonresistance ID = 30 A, VGS = 10 V, Tvj = 25°C RDS on 38,0 42,0 m Ω Gate-Schwellenspannung Gatethresholdvoltage ID = 3,30 mA, VDS = VGS, Tvj = 25°C VGS(th) 2,50 3,00 3,50 V Gateladung Gatecharge VGS = 10 V, VDD= 480 V QG 0,33 µC InternerGatewiderstand Internalgateresistor Tvj = 25°C RGint 0,7 Ω Eingangskapazität Inputcapacitance f = 1 MHz, Tvj = 25°C, VDS = 25 V, VGS = 0 V Ciss 8,00 nF Ausgangskapazität Outputcapacitance f = 1 MHz, Tvj = 25°C, VDS = 25 V, VGS = 0 V Coss 7,50 nF Rückwirkungskapazität Reversetransfercapacitance f = 1 MHz, Tvj = 25°C, VDS = 25 V, VGS = 0 V Crss 0,80 nF Drain-Source-Reststrom Zerogatevoltagedraincurrent VDS = 650 V, VGS = 0 V, Tvj = 25°C IDSS 2,00 µA Gate-Source-Reststrom Gate-sourceleakagecurrent VDS = 0 V, VGS = 20 V, Tvj = 25°C IGSS 100 nA Einschaltverzögerungszeit,induktiveLast Turnondelaytime,inductiveload ID = 30 A, VDS = 400 V VGS = 10 V RG = 7,50 Ω td on 20,0 17,5 16,0 ns Tvj = 25°C Tvj = 125°C Tvj = 150°C Anstiegszeit,induktiveLast Risetime,inductiveload ID = 30 A, VDS = 400 V VGS = 10 V RG = 7,50 Ω tr 15,0 15,5 16,0 ns Tvj = 25°C Tvj = 125°C Tvj = 150°C Abschaltverzögerungszeit,induktiveLast Turnoffdelaytime,inductiveload ID = 30 A, VDS = 400 V VGS = 10 V RG = 7,50 Ω td off 210 220 220 ns Tvj = 25°C Tvj = 125°C Tvj = 150°C Fallzeit,induktiveLast Falltime,inductiveload ID = 30 A, VDS = 400 V VGS = 10 V RG = 7,50 Ω tf 7,50 9,00 9,00 ns Tvj = 25°C Tvj = 125°C Tvj = 150°C EinschaltverlustenergieproPuls Turn-onenergylossperpulse ID = 30 A, VDS = 400 V, L σ = 25 nH VGS = 10 V, di/dt = 1600 A/µs (Tvj = 150) RG = 7,50 Ω Eon 0,32 0,36 0,37 mJ Tvj = 25°C Tvj = 125°C Tvj = 150°C AbschaltverlustenergieproPuls Turn-offenergylossperpulse ID = 30 A, VDS = 400 V, L σ = 25 nH VGS = 10 V, du/dt = 19500 V/µs (Tvj = 150) RG = 7,50 Ω Eoff 0,08 0,09 0,095 mJ Tvj = 25°C Tvj = 125°C Tvj = 150°C Wärmewiderstand,ChipbisGehäuse Thermalresistance,junctiontocase RthJC 0,35 0,40 K/W Wärmewiderstand,GehäusebisKühlkörper Thermalresistance,casetoheatsink pro MOS-FET / per MOS-FET λPaste = 1 W/(m*K) /λgrease = 1 W/(m*K) RthCH 0,40 K/W TemperaturimSchaltbetrieb Temperatureunderswitchingconditions Tvj op -40 150 °C Revers-Diode/reverse-diode min. typ. max. Durchlassspannung Forwardvoltage IS = 50 A, VGS = 0 V IS = 50 A, VGS = 0 V IS = 50 A, VGS = 0 V VSD 0,85 0,70 1,30 V Tvj = 25°C Tvj = 125°C Tvj = 150°C |
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