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LP2950ACZ-3.0G Datasheet(PDF) 4 Page - ON Semiconductor |
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LP2950ACZ-3.0G Datasheet(HTML) 4 Page - ON Semiconductor |
4 / 22 page LP2950, LP2951, NCV2951 www.onsemi.com 4 ELECTRICAL CHARACTERISTICS (Vin = VO + 1.0 V, IO = 100 mA, CO = 1.0 mF, TA = 25°C [Note 3], unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Output Voltage, 5.0 V Versions VO V Vin = 6.0 V, IO = 100 mA, TA = 25°C LP2950C−5.0/LP2951C/NCV2951C* 4.950 5.000 5.050 LP2950AC−5.0/LP2951AC/NCV2951AC* 4.975 5.000 5.025 TA = − 40 to +125°C LP2950C−5.0/LP2951C/NCV2951C* 4.900 − 5.100 LP2950AC−5.0/LP2951AC/NCV2951AC* 4.940 − 5.060 Vin = 6.0 to 30 V, IO = 100 mA to 100 mA, TA = − 40 to +125°C LP2950C−5.0/LP2951C/NCV2951C* 4.880 − 5.120 LP2950AC−5.0/LP2951AC/NCV2951AC* 4.925 − 5.075 Output Voltage, 3.3 V Versions VO V Vin = 4.3 V, IO = 100 mA, TA = 25°C LP2950C−3.3/LP2951C−3.3 3.267 3.300 3.333 LP2950AC−3.3/LP2951AC−3.3/NCV2951AC−3.3* 3.284 3.300 3.317 TA = − 40 to +125°C LP2950C−3.3/LP2951C−3.3 3.234 − 3.366 LP2950AC−3.3/LP2951AC−3.3/NCV2951AC−3.3* 3.260 − 3.340 Vin = 4.3 to 30 V, IO = 100 mA to 100 mA, TA = − 40 to +125°C LP2950C−3.3/LP2951C−3.3 3.221 − 3.379 LP2950AC−3.3/LP2951AC−3.3/NCV2951AC−3.3* 3.254 − 3.346 Output Voltage, 3.0 V Versions VO V Vin = 4.0 V, IO = 100 mA, TA = 25°C LP2950C−3.0/LP2951C−3.0 2.970 3.000 3.030 LP2950AC−3.0/LP2951AC−3.0 2.985 3.000 3.015 TA = − 40 to +125°C LP2950C−3.0/LP2951C−3.0 2.940 − 3.060 LP2950AC−3.0/LP2951AC−3.0 2.964 − 3.036 Vin = 4.0 to 30 V, IO = 100 mA to 100 mA, TA = − 40 to +125°C LP2950C−3.0/LP2951C−3.0 2.928 − 3.072 LP2950AC−3.0/LP2951AC−3.0 2.958 − 3.042 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. The Junction−to−Ambient Thermal Resistance is determined by PCB copper area per Figure 29. 2. This device series contains ESD protection and exceeds the following tests: Human Body Model (HBM), 2000 V, Class 2, JESD22 A114−C Machine Model (MM), 200 V, Class B, JESD22 A115−A Charged Device Model (CDM), 2000 V, Class IV, JESD22 C101−C 3. Low duty pulse techniques are used during test to maintain junction temperature as close to ambient as possible. 4. VO(nom) is the part number voltage option. 5. Noise tests on the LP2951 are made with a 0.01 mF capacitor connected across Pins 7 and 1. *NCV prefix is for automotive and other applications requiring site and change control. |
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