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AP10N4R5S Datasheet(PDF) 1 Page - Advanced Power Electronics Corp. |
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AP10N4R5S Datasheet(HTML) 1 Page - Advanced Power Electronics Corp. |
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1 / 6 page  Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ 100% R g & UIS Test BVDSS 100V ▼ Simple Drive Requirement RDS(ON) 4.5mΩ ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free Description Absolute Maximum Ratings@Tj=25 oC(unless otherwise specified) Symbol Units VDS V VGS V ID@TC=25℃ A ID@TC=25℃ A ID@TC=100℃ A IDM A PD@TC=25℃ W PD@TA=25℃ W EAS Single Pulse Avalanche Energy 4 mJ TSTG ℃ TJ ℃ Symbol Value Units Rthj-c Maximum Thermal Resistance, Junction-case 0.9 ℃ /W Rthj-a 40 ℃ /W Maximum Thermal Resistance, Junction-ambient (PCB mount) 5 Parameter 1 Thermal Data -55 to 150 Total Power Dissipation 138.8 384 Total Power Dissipation 5 3.12 Storage Temperature Range Operating Junction Temperature Range Gate-Source Voltage +20 Pulsed Drain Current 1 Drain Current, VGS @ 10V 3 120 Drain Current, VGS @ 10V Drain Current, VGS @ 10V 3(Silicon Limited) 135 Parameter Rating Drain-Source Voltage 100 AP10N4R5S Halogen-Free Product 201705101 400 85 -55 to 150 G D S AP4604 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-220 package is widely preferred for all commercial- industrial through hole applications. The low thermal resistance and low package cost contribute to the worldwide popular package. G D S AP10N4R5 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-263 package is widely preferred for all commercial- industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance. G D S TO-263(S) . |
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