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10C150 Datasheet(PDF) 4 Page - Advanced Power Electronics Corp.

Part # 10C150
Description  N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
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Manufacturer  A-POWER [Advanced Power Electronics Corp.]
Direct Link  http://www.a-power.com.tw
Logo A-POWER - Advanced Power Electronics Corp.

10C150 Datasheet(HTML) 4 Page - Advanced Power Electronics Corp.

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AP10C150MT
N-Channel
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
4
0
2
4
6
8
10
012
345
V DS , Drain-to-Source Voltage (V)
T A =25
o C
10V
7.0V
6.0V
5.0V
V G = 4.0V
0
2
4
6
8
10
01
23
45
V DS , Drain-to-Source Voltage (V)
T A = 150
o C
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
-100
-50
0
50
100
150
T j , Junction Temperature (
o C)
I D =2A
V G =10V
0
1
2
3
4
5
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
T j =25
o C
T j =150
o C
98
102
106
110
114
24
68
10
V GS , Gate-to-Source Voltage (V)
I D =1 A
T A =25
o C
0.0
0.4
0.8
1.2
1.6
2.0
-100
-50
0
50
100
150
T j , Junction Temperature (
o C)
I D =1mA
10V
7.0V
6.0V
5.0V
V G = 4.0V
.


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