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NTE349 Datasheet(PDF) 2 Page - NTE Electronics

Part No. NTE349
Description  Silicon NPN Transistor RF Power Amp, Driver
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Maker  NTE [NTE Electronics]
Homepage  http://www.nteinc.com
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NTE349 Datasheet(HTML) 2 Page - NTE Electronics

   
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Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Functional Tests (VCE = 13.6V unless otherwise specified)
Common–Emitter Amplifier
Power Gain
GPE
Pout = 10W, f = 175MHz
5.2
dB
Power Input
Pin
POUT = 10W, f = 175MHz
3
W
Collector Efficiency
η
Pout = 10W, f = 175MHz
50
%
1.040 (26.4) Max
.520 (13.2)
.100 (2.54)
EE
C
B
.005 (0.15)
.168 (4.27)
.230
(5.84)
8–32–NC–3A
Wrench Flat
.385 (9.8)
Dia
.750
(19.05)


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