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NTE348 Datasheet(PDF) 1 Page - NTE Electronics

Part No. NTE348
Description  Silicon NPN Transistor RF Power Amp, Driver
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Maker  NTE [NTE Electronics]
Homepage  http://www.nteinc.com
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NTE348 Datasheet(HTML) 1 Page - NTE Electronics

   
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NTE348
Silicon NPN Transistor
RF Power Amp, Driver
Description:
The NTE348 is a silicon NPN transistor in a T72H type package designed primarily for use in 12.5V
VHF large–signal power amplifier applications required in military and industrial equipment to
300MHz.
Features:
D Specified 12.5V, 175MHz Characteristics:
Output Power = 4W
Minimum Gain = 12dB
Efficiency = 50%
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO
18V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage, VCES
36V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, VEBO
4V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Collector Current, IC
1A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (Note 1, TC = +25°C), PD
12W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
°C
68.5mW/
°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg
–65
° to +200°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. This device is designed for RF operation. The total device dissipation rating applies only
when the device is operated as an RF amplifier.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage
V(BR)CEO IC = 10mA, IB = 0
18
V
V(BR)CES IC = 5mA, VBE = 0
36
V
Emitter–Base Breakdown Voltage
V(BR)EBO IE = 1mA, IC = 0
4
V
Collector Cutoff Current
ICBO
VCB = 15V, IE = 0
0.25
mA
ICES
VCE = 15V, VBE = 0, TC = +55°C
5
mA
ON Characteristics
DC Current Gain
hFE
IC = 250mA, VCE = 5V
5


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