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NCP114AMX120TCG Datasheet(PDF) 3 Page - ON Semiconductor |
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NCP114AMX120TCG Datasheet(HTML) 3 Page - ON Semiconductor |
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3 / 18 page  NCP114 www.onsemi.com 3 ELECTRICAL CHARACTERISTICS −40 °C ≤ TJ ≤ 85°C; VIN = VOUT(NOM) + 1 V for VOUT options greater than 1.5 V. Otherwise VIN = 2.5 V, whichever is greater; IOUT = 1 mA, CIN = COUT = 1 mF, unless otherwise noted. VEN = 0.9 V. Typical values are at TJ = +25°C. Min./Max. are for TJ = −40°C and TJ = +85°C respectively (Note 4). Parameter Test Conditions Symbol Min Typ Max Unit Operating Input Voltage VIN 1.7 5.5 V Output Voltage Accuracy −40 °C ≤ TJ ≤ 85°C VOUT ≤ 2.0 V VOUT −40 +40 mV VOUT > 2.0 V −2 +2 % Line Regulation VOUT + 0.5 V ≤ VIN ≤ 5.5 V (VIN ≥ 1.7 V) RegLINE 0.01 0.1 %/V Load Regulation − UDFN package IOUT = 1 mA to 300 mA RegLOAD 12 30 mV Load Regulation − TSOP−5 package 28 45 Load Transient IOUT = 1 mA to 300 mA or 300 mA to 1 mA in 1 ms, COUT = 1 mF TranLOAD −50/ +30 mV Dropout Voltage − UDFN package (Note 5) IOUT = 300 mA VOUT = 1.5 V VDO 365 460 mV VOUT = 1.85 V 245 330 VOUT = 2.8 V 155 230 VOUT = 3.0 V 145 220 VOUT = 3.1 V 140 210 VOUT = 3.3 V 135 200 Dropout Voltage − TSOP package (Note 5) IOUT = 300 mA VOUT = 1.5 V VDO 380 485 mV VOUT = 1.85 V 260 355 VOUT = 2.8 V 170 255 VOUT = 3.0 V 160 245 VOUT = 3.1 V 155 235 VOUT = 3.3 V 150 225 Output Current Limit VOUT = 90% VOUT(nom) ICL 300 600 mA Ground Current IOUT = 0 mA IQ 50 95 mA Shutdown Current VEN ≤ 0.4 V, VIN = 5.5 V IDIS 0.01 1 mA EN Pin Threshold Voltage High Threshold Low Threshold VEN Voltage increasing VEN Voltage decreasing VEN_HI VEN_LO 0.9 0.4 V EN Pin Input Current VEN = 5.5 V IEN 0.3 1.0 mA Power Supply Rejection Ratio VIN = 3.6 V, VOUT = 3.1 V IOUT = 150 mA f = 1 kHz PSRR 75 dB Output Noise Voltage VIN = 2.5 V, VOUT = 1.8 V, IOUT = 150 mA f = 10 Hz to 100 kHz VN 70 mVrms Thermal Shutdown Temperature Temperature increasing from TJ = +25 °C TSD 160 °C Thermal Shutdown Hysteresis Temperature falling from TSD TSDH 20 °C Active Output Discharge Resistance VEN < 0.4 V, Version A only RDIS 100 W Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Performance guaranteed over the indicated operating temperature range by design and/or characterization. Production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 5. Characterized when VOUT falls 100 mV below the regulated voltage at VIN = VOUT(NOM) + 1 V. |
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