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FF225R12ME4P Datasheet(PDF) 2 Page - Infineon Technologies AG |
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FF225R12ME4P Datasheet(HTML) 2 Page - Infineon Technologies AG |
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2 / 9 page  Datasheet 2 V3.0 2017-04-04 FF225R12ME4P IGBT,Wechselrichter/IGBT,Inverter HöchstzulässigeWerte/MaximumRatedValues Kollektor-Emitter-Sperrspannung Collector-emittervoltage Tvj = 25°C VCES 1200 V Kollektor-Dauergleichstrom ContinuousDCcollectorcurrent TH = 70°C, Tvj max = 175°C IC nom 225 A PeriodischerKollektor-Spitzenstrom Repetitivepeakcollectorcurrent tP = 1 ms ICRM 450 A Gate-Emitter-Spitzenspannung Gate-emitterpeakvoltage VGES +/-20 V CharakteristischeWerte/CharacteristicValues min. typ. max. Kollektor-Emitter-Sättigungsspannung Collector-emittersaturationvoltage IC = 225 A, VGE = 15 V IC = 225 A, VGE = 15 V IC = 225 A, VGE = 15 V VCE sat 1,85 2,10 2,15 2,15 V V V Tvj = 25°C Tvj = 125°C Tvj = 150°C Gate-Schwellenspannung Gatethresholdvoltage IC = 7,80 mA, VCE = VGE, Tvj = 25°C VGEth 5,20 5,80 6,40 V Gateladung Gatecharge VGE = -15 V ... +15 V QG 1,55 µC InternerGatewiderstand Internalgateresistor Tvj = 25°C RGint 3,3 Ω Eingangskapazität Inputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cies 13,0 nF Rückwirkungskapazität Reversetransfercapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cres 0,705 nF Kollektor-Emitter-Reststrom Collector-emittercut-offcurrent VCE = 1200 V, VGE = 0 V, Tvj = 25°C ICES 3,0 mA Gate-Emitter-Reststrom Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25°C IGES 400 nA Einschaltverzögerungszeit,induktiveLast Turn-ondelaytime,inductiveload IC = 225 A, VCE = 600 V VGE = ±15 V RGon = 1,6 Ω td on 0,16 0,17 0,18 µs µs µs Tvj = 25°C Tvj = 125°C Tvj = 150°C Anstiegszeit,induktiveLast Risetime,inductiveload IC = 225 A, VCE = 600 V VGE = ±15 V RGon = 1,6 Ω tr 0,04 0,04 0,04 µs µs µs Tvj = 25°C Tvj = 125°C Tvj = 150°C Abschaltverzögerungszeit,induktiveLast Turn-offdelaytime,inductiveload IC = 225 A, VCE = 600 V VGE = ±15 V RGoff = 1,6 Ω td off 0,38 0,47 0,50 µs µs µs Tvj = 25°C Tvj = 125°C Tvj = 150°C Fallzeit,induktiveLast Falltime,inductiveload IC = 225 A, VCE = 600 V VGE = ±15 V RGoff = 1,6 Ω tf 0,07 0,09 0,10 µs µs µs Tvj = 25°C Tvj = 125°C Tvj = 150°C EinschaltverlustenergieproPuls Turn-onenergylossperpulse IC = 225 A, VCE = 600 V, LS = 80 nH VGE = ±15 V, di/dt = 5750 A/µs (Tvj = 150°C) RGon = 1,6 Ω Eon 6,80 12,5 15,0 mJ mJ mJ Tvj = 25°C Tvj = 125°C Tvj = 150°C AbschaltverlustenergieproPuls Turn-offenergylossperpulse IC = 225 A, VCE = 600 V, LS = 80 nH VGE = ±15 V, du/dt = 3400 V/µs (Tvj = 150°C) RGoff = 1,6 Ω Eoff 17,0 26,5 29,5 mJ mJ mJ Tvj = 25°C Tvj = 125°C Tvj = 150°C Kurzschlußverhalten SCdata VGE ≤ 15 V, VCC = 800 V VCEmax = VCES -LsCE ·di/dt ISC 900 A Tvj = 150°C tP ≤ 10 µs, Wärmewiderstand,ChipbisKühlkörper Thermalresistance,junctiontoheatsink proIGBT/perIGBT validwithIFXpre-appliedthermalinterfacematerial RthJH 0,175 K/W TemperaturimSchaltbetrieb Temperatureunderswitchingconditions Tvj op -40 150 °C |
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