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FF225R12ME4P Datasheet(PDF) 6 Page - Infineon Technologies AG |
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FF225R12ME4P Datasheet(HTML) 6 Page - Infineon Technologies AG |
6 / 9 page Datasheet 6 V3.0 2017-04-04 FF225R12ME4P SchaltverlusteIGBT,Wechselrichter(typisch) switchinglossesIGBT,Inverter(typical) Eon=f(RG),Eoff=f(RG) VGE=±15V,IC=225A,VCE=600V RG [ Ω] 0 2 4 6 8 10 12 14 16 0 10 20 30 40 50 60 70 80 Eon, Tvj = 125°C Eon, Tvj = 150°C Eoff, Tvj = 125°C Eoff, Tvj = 150°C TransienterWärmewiderstandIGBT,Wechselrichter transientthermalimpedanceIGBT,Inverter ZthJH=f(t) t [s] 0,001 0,01 0,1 1 10 0,001 0,01 0,1 1 ZthJH : IGBT i: ri[K/W]: τi[s]: 1 0,0116 0,000543 2 0,0653 0,0237 3 0,0768 0,122 4 0,0213 1,22 SichererRückwärts-ArbeitsbereichIGBT,Wechselrichter (RBSOA) reversebiassafeoperatingareaIGBT,Inverter(RBSOA) IC=f(VCE) VGE=±15V,RGoff=1.6 Ω,Tvj=150°C VCE [V] 0 200 400 600 800 1000 1200 1400 0 50 100 150 200 250 300 350 400 450 500 IC, Modul IC, Chip DurchlasskennliniederDiode,Wechselrichter(typisch) forwardcharacteristicofDiode,Inverter(typical) IF=f(VF) VF [V] 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4 0 75 150 225 300 375 450 Tvj = 25°C Tvj = 125°C Tvj = 150°C |
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