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HSWA2-63DR Datasheet(PDF) 1 Page - Mini-Circuits |
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HSWA2-63DR Datasheet(HTML) 1 Page - Mini-Circuits |
1 / 5 page SP2T RF Switch Page 1 of 5 Notes A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp Mini-Circuits® www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com MMIC HSWA2-63DR+ The Big Deal • High Isolation, 69 dB at 1.0 GHz • High Input IP3, +65 dBm • Fast switching, 300 ns • Tiny Size, 4x4mm Product Overview Mini-Circuits’ HSWA2-63DR+ is a MMIC SPDT absorptive switch with an internal driver designed for wideband operation from 100 MHz to 6.0 GHz supporting many applications requiring high performance across a wide frequency range. This model provides excellent isolation, fast switching speed and high linearity in a tiny 4x4mm 20-Lead MCLP package. Produced using a unique CMOS process on silicon, it offers the performance of GaAs with the advantages of conventional CMOS devices. HSWA2-63DR+ provides a high level of ESD protection and excellent repeatability. Key Features Feature Advantages Wideband, 100 MHz to 6.0 GHz Usable over 1kHz to 6 GHz One model can be used in many applications, saving component count. Also ideal for wideband applications such as military and instrumentation. With lower input power it can operate over 1kHz to 6 GHz covering even wider applica- tions Absorptive switch In the off condition, RF output ports which are not switched ON are terminated into 50Ω. This enables proper impedance termination of the circuitry following the RF out- put ports, preventing any unintended action such as oscillation. High Isolation: • 71 dB at 1000 MHz • 48 dB at 6000 MH High isolation significantly reduces leakage of power into OFF ports. High linearity, +65 dBm IIP3 High linearity minimizes unwanted intermodulation products which are difficult or impossible to filter in multi-carrier environments such as CATV, or in the presence of strong interfering signal from adjacent circuitry or received by antenna. Tiny size, 4 x 4mm MCLP package Tiny footprint saves space in dense layouts while providing low inductance, repeatable transitions, and excellent thermal contact to the PCB. Absorptive RF Switch with internal driver Single Supply Voltage, +2.7V to +5.5V CASE STYLE: DG983-3 |
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