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SMBJ-E Datasheet(PDF) 1 Page - Littelfuse

Part # SMBJ-E
Description  The SMBJ-E series is designed specifically to protect
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Manufacturer  LITTELFUSE [Littelfuse]
Direct Link  http://www.littelfuse.com
Logo LITTELFUSE - Littelfuse

SMBJ-E Datasheet(HTML) 1 Page - Littelfuse

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©2016 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 06/29/16
TVS Diodes
Surface Mount – 600W > SMBJ series
Description
The SMBJ-E series is designed specifically to protect
sensitive electronic equipment from voltage transients
induced by lightning and other transient voltage events.
Features
• Excellentclamping
capability
• Lowincrementalsurge
resistance
•Forsurfacemounted
applications to optimize
board space
•Lowprofilepackage
•Typicalfailuremodeis
short from over-specified
voltage or current
•Whiskertestisconducted
based on JEDEC
JESD201A per its table 4a
and 4c
•IEC-61000-4-2ESD
30kV(Air),30kV(Contact)
•ESDprotectionofdata
linesinaccordancewith
IEC61000-4-2
•EFTprotectionofdata
linesinaccordancewith
IEC61000-4-4
•Built-instrainrelief
• Fastresponsetime:
typically less than 1.0ps
from0VtoBVmin
•600Wpeakpulsepower
capability at 10/1000μs
waveform,repetitionrate
(dutycycles):0.01%
•Hightemperature
toreflowsoldering
guaranteed:260°C/40sec
•V
BR @ TJ=VBR@25°C
x(1+αTx(T
J-25))
(αT:Temperature
Coefficient,typicalvalueis
0.1%)
•EPIsilicontechnology
•MeetMSLlevel1,per
J-STD-020C,LFmaximun
peakof260°C
• Mattetinlead–freeplated
•HalogenfreeandRoHS
compliant
•Pb-freeE3means2nd
level interconnect is
Pb-freeandtheterminal
finishmaterialistin(Sn)
(IPC/JEDECJ-STD-
609A.01)
Applications
TVSdevicesareidealfortheprotectionofI/OInterfaces,
V
CCbusandothervulnerablecircuitsusedinTelecom,
Computer,IndustrialandConsumerelectronicapplications.
Maximum Ratings and Thermal Characteristics
(T
A=25
O
C unless otherwise noted)
Parameter
Symbol
Value
Unit
PeakPulsePowerDissipationat
T
A=25ºCby10/1000µsWaveform
(Fig.2)(Note1),(Note2))
P
PPM
600
W
PowerDissipationonInfiniteHeat
SinkatT
L=50
O
C
P
D
5.0
W
PeakForwardSurgeCurrent,8.3ms
SingleHalfSineWave(Note3)
I
FSM
100
A
MaximumInstantaneousForward
Voltageat50AforUnidirectional
Only
V
F
3.5
V
OperatingTemperatureRange
T
J
-65to150
°C
Storage Temperature Range
T
STG
-65to175
°C
Typical Thermal Resistance Junction
toLead
R
θJL
20
°C/W
Typical Thermal Resistance Junction
to Ambient
R
θJA
100
°C/W
Notes:
1.Non-repetitivecurrentpulse,perFig.4andderatedaboveT
J(initial)=25
O
CperFig.3.
2.Mountedoncopperpadareaof0.2x0.2”(5.0x5.0mm)toeachterminal.
3.Measuredon8.3mssinglehalfsinewaveorequivalentsquarewaveforunidirectional
deviceonly,dutycycle=4perminutemaximum.
SMBJ-E Series
Uni-directional
Functional Diagram
Bi-directional
Uni-directional
Cathode
Anode
RoHS
Pb e3
SMBJ-E Series


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