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SMBJ-E Datasheet(PDF) 1 Page - Littelfuse |
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SMBJ-E Datasheet(HTML) 1 Page - Littelfuse |
1 / 5 page ©2016 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 06/29/16 TVS Diodes Surface Mount – 600W > SMBJ series Description The SMBJ-E series is designed specifically to protect sensitive electronic equipment from voltage transients induced by lightning and other transient voltage events. Features • Excellentclamping capability • Lowincrementalsurge resistance •Forsurfacemounted applications to optimize board space •Lowprofilepackage •Typicalfailuremodeis short from over-specified voltage or current •Whiskertestisconducted based on JEDEC JESD201A per its table 4a and 4c •IEC-61000-4-2ESD 30kV(Air),30kV(Contact) •ESDprotectionofdata linesinaccordancewith IEC61000-4-2 •EFTprotectionofdata linesinaccordancewith IEC61000-4-4 •Built-instrainrelief • Fastresponsetime: typically less than 1.0ps from0VtoBVmin •600Wpeakpulsepower capability at 10/1000μs waveform,repetitionrate (dutycycles):0.01% •Hightemperature toreflowsoldering guaranteed:260°C/40sec •V BR @ TJ=VBR@25°C x(1+αTx(T J-25)) (αT:Temperature Coefficient,typicalvalueis 0.1%) •EPIsilicontechnology •MeetMSLlevel1,per J-STD-020C,LFmaximun peakof260°C • Mattetinlead–freeplated •HalogenfreeandRoHS compliant •Pb-freeE3means2nd level interconnect is Pb-freeandtheterminal finishmaterialistin(Sn) (IPC/JEDECJ-STD- 609A.01) Applications TVSdevicesareidealfortheprotectionofI/OInterfaces, V CCbusandothervulnerablecircuitsusedinTelecom, Computer,IndustrialandConsumerelectronicapplications. Maximum Ratings and Thermal Characteristics (T A=25 O C unless otherwise noted) Parameter Symbol Value Unit PeakPulsePowerDissipationat T A=25ºCby10/1000µsWaveform (Fig.2)(Note1),(Note2)) P PPM 600 W PowerDissipationonInfiniteHeat SinkatT L=50 O C P D 5.0 W PeakForwardSurgeCurrent,8.3ms SingleHalfSineWave(Note3) I FSM 100 A MaximumInstantaneousForward Voltageat50AforUnidirectional Only V F 3.5 V OperatingTemperatureRange T J -65to150 °C Storage Temperature Range T STG -65to175 °C Typical Thermal Resistance Junction toLead R θJL 20 °C/W Typical Thermal Resistance Junction to Ambient R θJA 100 °C/W Notes: 1.Non-repetitivecurrentpulse,perFig.4andderatedaboveT J(initial)=25 O CperFig.3. 2.Mountedoncopperpadareaof0.2x0.2”(5.0x5.0mm)toeachterminal. 3.Measuredon8.3mssinglehalfsinewaveorequivalentsquarewaveforunidirectional deviceonly,dutycycle=4perminutemaximum. SMBJ-E Series Uni-directional Functional Diagram Bi-directional Uni-directional Cathode Anode RoHS Pb e3 SMBJ-E Series |
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