This Data Sheet may be revised by subsequent versions

©2003 Eon Silicon Solution, Inc., www.essi.com.tw

or modifications due to changes in technical specifications.

1

EN29F040A

Rev. B, Issue Date: 2004/04/01

FEATURES

• 5.0V operation for read/write/erase

operations

• Fast Read Access Time

- 45ns, 55ns, 70ns, and 90ns

• Sector Architecture:

- 8 uniform sectors of 64Kbytes each

- Supports full chip erase

- Individual sector erase supported

- Sector protection:

Hardware locking of sectors to prevent

program or erase operations within

individual sectors

• High performance program/erase speed

- Byte program time: 10µs typical

- Sector erase time: 500ms typical

- Chip erase time: 3.5s typical

• Low Standby Current

- 1µA CMOS standby current-typical

- 1mA TTL standby current

• Low Power Active Current

- 30mA active read current

- 30mA program/erase current

• JEDEC Standard program and erase

commands

• JEDEC standard DATA polling and toggle

bits feature

• Single Sector and Chip Erase

• Sector Unprotect Mode

• Embedded Erase and Program Algorithms

• Erase Suspend / Resume modes:

Read and program another Sector during

Erase Suspend Mode

• 0.23 µm triple-metal double-poly

triple-well CMOS Flash Technology

• Low Vcc write inhibit < 3.2V

• 100K endurance cycle

• Package Options

- 32-pin PDIP

- 32-pin PLCC

- 32-pin TSOP (Type 1)

• Commercial and Industrial Temperature

Ranges

GENERAL DESCRIPTION

The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory.

Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform

sectors of 64Kbytes each.

Any byte can be programmed typically in 10µs.

The EN29F040A

features 5.0V voltage read and write operation, with access times as fast as 45ns to eliminate the

need for WAIT states in high-performance microprocessor systems.

controls, which eliminate bus contention issues. This device is designed to allow either single (or

multiple) Sector or full chip erase operation, where each Sector can be individually protected against

program/erase operations or temporarily unprotected to erase or program. The device can sustain a

minimum of 100K program/erase cycles on each Sector.

EN29F040A

4 Megabit (512K x 8-bit) Flash Memory