![]() |
Electronic Components Datasheet Search |
|
IC61LV6416 Datasheet(PDF) 2 Page - Integrated Circuit Solution Inc |
|
IC61LV6416 Datasheet(HTML) 2 Page - Integrated Circuit Solution Inc |
2 / 9 page ![]() IC61LV6416 2 Integrated Circuit Solution Inc. AHSR026-0A 09/12/2001 FEATURES • High-speed access time: 8, 10, 12, and 15 ns • CMOS low power operation — 250 mW (typical) operating — 250 µW (typical) standby • TTL compatible interface levels • Single 3.3V power supply • Fully static operation: no clock or refresh required • Three state outputs • Data control for upper and lower bytes • Industrial temperature available 64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION The ICSI IC61LV6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated using ICSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with low power consumption. When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE and OE. The active LOW Write Enable ( WE) controls both writing and reading of the memory. A data byte allows Upper Byte ( UB) and Lower Byte (LB) access. The IC61LV6416 is packaged in the JEDEC standard 44-pin 400mil SOJ, 44-pin 400mil TSOP-2, and 48-pin 6*8mm TF- BGA. FUNCTIONAL BLOCK DIAGRAM ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which may appear in this publication. © Copyright 2000, Integrated Circuit Solution Inc. A0-A15 CE OE WE 64K x 16 MEMORY ARRAY DECODER COLUMN I/O CONTROL CIRCUIT GND VCC I/O DATA CIRCUIT I/O0-I/O7 Lower Byte I/O8-I/O15 Upper Byte UB LB |