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NTE338F Datasheet(PDF) 1 Page - NTE Electronics

Part No. NTE338F
Description  Silicon NPN Transistor RF Power Amp, Driver
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Maker  NTE [NTE Electronics]
Homepage  http://www.nteinc.com
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NTE338F Datasheet(HTML) 1 Page - NTE Electronics

   
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NTE338F
Silicon NPN Transistor
RF Power Amp, Driver
Description:
The NTE338F is a silicon NPN transistor in a W52K type package designed primarily for use as a
power linear amplifier from 2 to 30MHz.
Features:
D Specified 12.5V, 30MHz Characteristics:
Output Power = 20W (PEP)
Minimum Gain = 12dB
Efficiency = 45%
D Intermodulation Distortion @ 20W (PEP):
IMD = –30dB Min
D 100% Tested for Load Mismatched at all Phase Angle with 30:1 VSWR
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO
20V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Base Voltage, VCBO
40V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, VEBO
4V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Collector Current, IC
4A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Withstand Current (t = 5s)
12A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (TC = +25°C), PD
80W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
°C
0.46W/
°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, TJ
+200
°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg
–65
° to +150°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Case, RthJC
2.2
°C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage
V(BR)CEO IC = 50mA, IB = 0
20
V
V(BR)CES IC = 50mA, VBE = 0
40
V
Collector–Base Breakdown Voltage
V(BR)CBO IC = 50mA, IE = 0
40
V
Emitter–Base Breakdown Voltage
V(BR)EBO IE = 1mA, IC = 0
4
V
Collector Cutoff Current
ICES
VCE = 12.5V, VBE = 0
5
mA


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