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EN29F512-70SC Datasheet(PDF) 7 Page - Eon Silicon Solution Inc.

Part # EN29F512-70SC
Description  512 Kbit (64K x 8-bit) 5V Flash Memory
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Manufacturer  EON [Eon Silicon Solution Inc.]
Direct Link  http://www.essi.com.tw
Logo EON - Eon Silicon Solution Inc.

EN29F512-70SC Datasheet(HTML) 7 Page - Eon Silicon Solution Inc.

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This Data Sheet may be revised by subsequent versions
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
7
EN29F512
Rev. A, Issue Date: 2003/10/20
Reset Command
Writing the reset command to the device resets the device to reading array data. Address bits are
don’t care for this command.
The reset command may be written between the sequence cycles in an erase command sequence
before erasing begins. This resets the device to reading array data. Once erasure begins, however,
the device ignores reset commands until the operation is complete. The reset command may be
written between the sequence cycles in a program command sequence before programming begins.
This resets the device to reading array data (also applies to programming in Erase Suspend mode).
Once programming begins, however, the device ignores reset commands until the operation is
complete.
The reset command may be written between the sequence cycles in an autoselect command
sequence. Once in the autoselect mode, the reset command must be written to return to reading
array data (also applies to autoselect during Erase Suspend).
If DQ5 goes high during a program or erase operation, writing the reset command returns the device
to reading array data (also applies during Erase Suspend).
Write Mode
Programming is a four-bus-cycle operation. The program command sequence is initiated by writing
two unlock write cycles, followed by the program set-up command. The program address and data
are written next, which in turn initiate the Embedded Program algorithm. The system is not required
to provide further controls or timings. The device automatically provides internally generated
program pulses and verifies the programmed cell margin. Table 5 (Command Definitions) shows the
address and data requirements for the byte program command sequence.
When the Embedded Program algorithm is complete, the device then returns to reading array data
and addresses are no longer latched. The system can determine the status of the program operation
by using DQ7 or DQ6. See “Write Operation Status” for information on these status bits.
Any commands written to the device during the Embedded Program Algorithm are ignored.
Programming is allowed in any sequence and across sector boundaries. A bit cannot be
programmed from a “0” back to a “1”. Attempting to do so may halt the operation and set DQ5 to
“1”, or cause the Data# Polling algorithm to indicate the operation was successful. However, a
succeeding read will show that the data is still “0”. Only erase operations can convert a “0” to a “1”.
COMMAND DEFINITIONS
The operations of the EN29F512 are selected by one or more commands written into the
command register to perform Read/Reset Memory, Read ID, Read Sector Protection, Program,
Sector Erase, Chip Erase, Erase Suspend and Erase Resume. Commands are made up of data
sequences written at specific addresses via the command register.
The sequences for the
specified operation are defined in the Command Table (Table 5). Incorrect addresses, incorrect
data values or improper sequences will reset the device to the read mode.


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