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NTE337 Datasheet(PDF) 1 Page - NTE Electronics

Part No. NTE337
Description  Silicon NPN Transistor RF Power Amp, Driver
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Maker  NTE [NTE Electronics]
Homepage  http://www.nteinc.com
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NTE337 Datasheet(HTML) 1 Page - NTE Electronics

   
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NTE337
Silicon NPN Transistor
RF Power Amp, Driver
Description:
The NTE337 is a silicon NPN transistor in a T72H type package designed primarily for use in large–
signal amplifier driver and pre–driver stages. This device is intended for use in industrial communica-
tions equipment operating at frequencies to 80MHz.
Features:
D Specified 12.5V, 50MHz Characteristics:
Output Power = 8W
Minimum Gain = 10dB
Efficiency = 50%
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO
18V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Base Voltage, VCB
36V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, VEB
4V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Collector Current, IC
2A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (TC = +25°C), PD
20W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
°C
114W/
°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, TJ
–65
° to +200°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg
–65
° to +200°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage
V(BR)CEO IC = 200mA, IB = 0, Note 1
18
V
V(BR)CES IC = 50mA, VBE = 0, Note 1
36
V
Emitter–Base Breakdown Voltage
V(BR)EBO IE = 5mA, IC = 0
4
V
Collector Cutoff Current
ICES
VCE = 15V, VBE = 0, TC = +125°C
10
mA
ICBO
VCB = 15V, IE = 0
1
mA
ON Characteristics
DC Current Gain
hFE
IC = 500mA, VCE = 5V
5
Note 1. Pulsed through a 25mH inductor.
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Dynamic Characteristics
Output Capacitance
Cob
VCB = 15V, IE = 0, f = 0.1 to 1MHz
90
pF


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