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DST1050S Datasheet(PDF) 1 Page - Littelfuse |
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DST1050S Datasheet(HTML) 1 Page - Littelfuse |
1 / 3 page Schottky Barrier Rectifier ©2017 Littelfuse, Inc Specifications are subject to change without notice. Revised:03/16/17 DST860S, 8A, 60V,TO-277B, Single DST1050S RoHS Pb Maximum Ratings Parameters Symbol Test Conditions Max Unit Peak Inverse Voltage V RWM - 50 V Average Forward Current I F(AV) 50% duty cycle @T L = 125 °C rectangular wave form 10 A Peak One Cycle Non-Repetitive Surge Current I FSM 8.3 ms, half Sine pulse 150 A Electrical Characteristics Parameters Symbol Test Conditions Typ Max Unit Forward Voltage Drop* V F1 @5A, Pulse, T J = 25 °C 0.40 0.48 V @10A, Pulse, T J = 25 °C 0.47 0.55 V F2 @5A, Pulse, T J = 125 °C 0.30 0.39 @10A, Pulse, T J = 125 °C 0.40 0.49 Reverse Current* I R1 @V R = rated VR, TJ = 25 °C 0.05 1.5 mA I R2 @V R = rated VR, TJ = 125 °C 32 85 * Pulse Width < 300μs, Duty Cycle <2% Pin out 1 K 2 Anode Anode Cathode Description Applications Littelfuse DST series Ultra Low V F Schottky Barrier Rectifier is designed to meet the general requirements of commercial and industry applications by providing high temperature, low leakage and lower V F products. It is suitable for high frequency switching mode power supply, free-wheeling diodes and polarity protection diodes. • Switching mode power supply • DC/DC converters • Free-Wheeling diodes • Polarity Protection Diodes Features DST1050S, 10A, 50V,TO-277B, Single • Ultra low forward voltage drop • High frequency operation • MSL: Level 1 - unlimited • High junction temperature capability • Trench MOS Schottky technology • Single die in TO-277B Package • Pb-free E3 means 2nd level interconnect is Pb-free and the terminal finish material is tin(Sn) (IPC/ JEDEC J-STD- 609A.01) e3 |
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