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FZT956TA Datasheet(PDF) 4 Page - Diodes Incorporated

Part No. FZT956TA
Description  200V PNP MEDIUM POWER TRANSISTOR
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Maker  DIODES [Diodes Incorporated]
Homepage  http://www.diodes.com
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 4 page
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FZT956
Datasheet Number: DS36119 Rev. 6 - 2
4 of 7
www.diodes.com
April 2017
© Diodes Incorporated
FZT956
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ.
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
BVCBO
-220
-300
V
IC = -100µA
Collector-Emitter Breakdown Voltage (Note 10)
BVCER
-220
-300
V
IC = -1µA, RB ≤ 1kΩ
Collector-Emitter Breakdown Voltage (Note 10)
BVCEO
-200
-240
V
IC = -1mA
Emitter-Base Breakdown Voltage
BVEBO
-7
-8.3
V
IE = -100µA
Collector Cut-Off Current
ICBO
-50
-1
nA
µA
VCB = -200V
VCB = -200V, TA = +100°C
Collector Cut-Off Current
ICER
-50
-1
nA
µA
VCE = -200V, R 1kΩ
VCE = -200V, TA = +100°C
Emitter Cut-Off Current
IEBO
-10
nA
VEB = -6V
DC Current Transfer Static Ratio (Note 10)
hFE
100
200
IC = -10mA, VCE = -5V
100
200
300
IC = -1A, VCE = -5V
50
150
IC = -2A, VCE = -5V
10
IC = -5A, VCE = -5V
Collector-Emitter Saturation Voltage (Note 10)
VCE(SAT)
-30
-50
mV
IC = -100mA, IB = -10mA
-120
-165
IC = -1A, IB = -100mA
-168
-275
IC = -2A, IB = -400mA
Base-Emitter Saturation Voltage (Note 10)
VBE(SAT)
-970
-1,110
mV
IC = -2A, IB = -400mA
Base-Emitter Turn-On Voltage (Note 10)
VBE(ON)
-810
-950
mV
IC = -2A, VCE = -5V
Transitional Frequency (Note 10)
fT
110
MHz
IC = -100mA, VCE = -10V,
f = 50MHz
Output Capacitance
COBO
32
pF
VCB = -20V, f = 1MHz
Switching Time
tON
67
ns
VCC = -50V, IC = -1A,
-IB1 = IB2 = -100mA
tOFF
1,140
Note:
10. Measured under pulsed conditions. Pulse width
≤ 300μs. Duty cycle ≤ 2%.




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