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FZT955TA Datasheet(PDF) 4 Page - Diodes Incorporated

Part No. FZT955TA
Description  140V PNP MEDIUM POWER TRANSISTOR
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Maker  DIODES [Diodes Incorporated]
Homepage  http://www.diodes.com
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FZT955
Datasheet Number: DS33190 Rev. 6 - 2
4 of 7
www.diodes.com
November 2016
© Diodes Incorporated
FZT955
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ.
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
BVCBO
-180
-210
-
V
IC = -100µA
Collector-Emitter Breakdown Voltage
BVCER
-180
-210
-
V
IC = -1µA, RB 1kΩ
Collector-Emitter Breakdown Voltage (Note 9)
BVCEO
-140
-170
-
V
IC = -10mA
Emitter-Base Breakdown Voltage
BVEBO
-7
-8
-
V
IE = -100µA
Collector Cut-Off Current
ICBO
-
-
<1
-
-50
-1
nA
µA
VCB = -150V
VCB = -150V, TA = +100°C
Collector Cut-Off Current
ICER
R
1kΩ
-
-
<1
-
-50
-1
nA
µA
VCE = -150V
VCE = -150V, TA = +100°C
Emitter Cut-Off Current
IEBO
-
-
-10
nA
VEB = -6V
DC Current Transfer Static Ratio (Note 9)
hFE
100
200
-
-
IC = -10mA, VCE = -5V
100
200
300
IC = -1A, VCE = -5V
75
140
-
IC = -3A, VCE = -5V
-
10
-
IC = -10A, VCE = -5V
Collector-Emitter Saturation Voltage (Note 9)
VCE(sat)
-
-30
-60
mV
IC = -100mA, IB = -5mA
-
-70
-120
IC = -500mA, IB = -50mA
-
-110
-150
IC = -1A, IB = -100mA
-
-275
-370
IC = -3A, IB = -300mA
Base-Emitter Saturation Voltage (Note 9)
VBE(sat)
-
-970
-1,110
mV
IC = -3A, IB = -300mA
Base-Emitter Turn-On Voltage (Note 9)
VBE(on)
-
-830
-950
mV
IC = -3A, VCE = -5V
Transitional Frequency (Note 9)
fT
-
110
-
MHz
IC = -100mA, VCE = -10V,
f = 50MHz
Output Capacitance
Cobo
-
40
-
pF
VCB = -20V, f = 1MHz
Switching Time
tON
-
68
-
ns
VCC = -50V, IC = -1A,
-IB1 = IB2 = -100mA
tOFF
-
1,030
-
Note:
9. Measured under pulsed conditions. Pulse width
≤ 300μs. Duty cycle ≤ 2%.




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