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TS20N60PB Datasheet(PDF) 2 Page - Thinki Semiconductor Co., Ltd. |
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TS20N60PB Datasheet(HTML) 2 Page - Thinki Semiconductor Co., Ltd. |
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2 / 3 page  TS20N60PB b) Electrical Parameters: Symbol Parameter Test Conditions Min Typ Max Unit VDS Drain-source Voltage VGS =0V, ID=250µA 600 V RDS(on) Static Drain-to-Source on-Resistance VGS =10V, ID=10A 0.36 0.45 Ω VGS(th) Gated Threshold Voltage VDS=VGS, ID=250µA 2.0 4.0 V IDSS Drain to Source leakeage Current VDS=600V, VGS = 0V 1.0 µ A IGSS(F) Gated to Source Forward Leakage VGS = +30V 100 nA IGSS(R) Gated to Source Reverse Leakage VGS = -30V -100 nA Ciss Input Capacitance VGS =0V, VDS=25V, f=1.0MHZ 2847 pF Coss Output Capacitance 252 pF Crss Reverse Transfer Capacitance 20 pF c) Switching Characteristics Symbol Parameter Test Conditions Min Typ Max Unit td(on) Turn-on Delay Time VDD=300V,ID=20A, RG=25Ω 36 nS tr Turn-on Rise Time 73 nS td(off) Turn-off Delay Time 166 nS tf Turn-off Fall Time 73 nS Qg Total Gate Charge VDS=300V ID=20A VGS=10V 61 nC Qgs Gate-Source Charge 14 nC Qgd Gate-Drain Charge 24 nC d) Source-Drain Diode Characteristics Symbol Parameter Test Conditions Min Typ Max Unit ISD S-D Current(Body Diode) 20 A ISDM Pulsed S-D Current(Body Diode) 80 A VSD Diode Forward Voltage VGS =0V, IDS=20A 1.5 V trr Reverse Recovery Time TJ=25℃,IS=20A di/dt=100A/us 425 nS Qrr Reverse Recovery Charge 3.7 µ C *Pulse Test: Pulse Width <= 300µs, Duty Cycle< =2% Symbol Parameter Typ Units RθJC Junction-to-Case 0.5 ℃ /W RθJA Junction-to-Ambient 40 ℃ /W © 2006 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com/ Page 2/3 Rev.08C |
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