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SIP41101DQ-T1 Datasheet(PDF) 2 Page - Vishay Siliconix |
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SIP41101DQ-T1 Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 6 page SiP41101 Vishay Siliconix New Product www.vishay.com 2 Document Number: 72377 S-31578—Rev. A, 11-Aug-03 ABSOLUTE MAXIMUM RATINGS (ALL VOLTAGES REFERENCED TO GND = 0 V) VDD 7 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VIN -0.3 V to VDD + 0.3 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VSH 30 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VBOOT VSH + 7 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Storage Temperature -40 to 150_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating Junction Temperature 125_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Power Dissipationa TSSOP-16 925 mW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Thermal Impedance (QJA)a TSSOP-16 135_C/W . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Notes a. Device mounted with all leads soldered or welded to PC board. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. RECOMMENDED OPERATING RANGE (ALL VOLTAGES REFERENCED TO GND = 0 V) VDD 4.5 V to 5.5 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VBOOT 4.5 V to 30 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . CBOOT 100 nF to 1 mF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating Temperature Range -40 to 85_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . SPECIFICATIONSa Test Conditions Unless Specified Limits Parameter Symbol p VDD = 4.5 to 5.5 V, VBOOT = 4.5 to 30 V, TA = -40 to 85_C Mina Typb Maxa Unit Power Supplies Supply Voltage VDD 4.5 5.5 V Supply Current IDD fIN = 300 kHz, SD = H, Sync_en = H see Figure 1 25 40 mA Quiescent Current IDDQ IN = L, SD = H, Sync_en = H, No Load 1.4 2.5 mA Reference Voltage Break-Before-Make VBBM VDD = 5.5 V 2.5 V Logic Inputs — IN, Sync En, SD Input High VIH 2.5 V Input Low VIL 1.0 V Undervoltage Lockout VDD Undervoltage VUVL VDD Rising 2.5 3.6 4.4 V Undervoltage Hysteresis VHYST 400 mV Bootstrap Diode Forward Voltage VF IF = 10 mA 0.65 V MOSFET Drivers High Side Drive Currentc IPKH(source) VBOOT VSH = 4 5 V VOUTH VSA=2 25V 3.0 High-Side Drive Currentc IPKH(sink) VBOOT - VSH = 4.5 V, VOUTH-VSA=2.25V 3.0 A Low Side Drive Currentc IPKL(source) VDD = 4 5 V VOUTL=2 25V 4.1 A Low-Side Drive Currentc IPKL(sink) VDD = 4.5 V, VOUTL=2.25V 4.1 High Side Driver Impedance RDH(source) VDD = 4 5 V SH = GND 0.75 1.3 High-Side Driver Impedance RDH(sink) VDD = 4.5 V, SH = GND 0.75 1.3 W Low Side Driver Impedance RDL(source) VDD = 4 5 V 0.55 1.1 W Low-Side Driver Impedance RDL(sink) VDD = 4.5 V 0.55 1.1 |
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