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SI3585DV Datasheet(PDF) 2 Page - Vaishali Semiconductor

Part No. SI3585DV
Description  N- and P-Channel 20-V (D-S) MOSFET
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Maker  VAISH [Vaishali Semiconductor]
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SI3585DV Datasheet(HTML) 2 Page - Vaishali Semiconductor

   
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Si3585DV
Vishay Siliconix
www.vishay.com
2
Document Number: 71184
S-03512—Rev. B, 04-Apr-01
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
VDS = VGS, ID = 250 mA
N-Ch
0.6
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = –250 mA
P-Ch
–0.5
V
"
N-Ch
"100
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "12 V
P-Ch
"100
nA
VDS = 16 V, VGS = 0 V
N-Ch
1
VDS = –16 V, VGS = 0 V
P-Ch
–1
m
Zero Gate Voltage Drain Current
IDSS
VDS = 16 V, VGS = 0 V, TJ = 55_C
N-Ch
5
mA
VDS = –16 V, VGS = 0 V, TJ = 55_C
P-Ch
–5
VDS w 5 V, VGS = 4.5 V
N-Ch
5
On-State Drain Currenta
ID(on)
VDS p –5 V, VGS = –4.5 V
P-Ch
–5
A
VGS = 4.5 V, ID = 2.4 A
N-Ch
0.100
0.125
VGS = –4.5 V, ID = –1.8 A
P-Ch
0.160
0.200
W
Drain-Source On-State Resistancea
rDS(on)
VGS = 2.5 V, ID = 1.8 A
N-Ch
0.160
0.200
W
VGS = –2.5 V, ID = –1.2 A
P-Ch
0.280
0.340
VDS = 5 V, ID = 2.4 A
N-Ch
5
Forward Transconductancea
gfs
VDS = –5 V, ID = –1.8 A
P-Ch
3.6
S
IS = 1.05 A, VGS = 0 V
N-Ch
0.80
1.10
Diode Forward Voltagea
VSD
IS = –1.05 A, VGS = 0 V
P-Ch
–0.83
–1.10
V
Dynamicb
N-Ch
2.1
3.2
Total Gate Charge
Qg
N-Channel
P-Ch
2.7
4.0
N-Channel
VDS = 10 V, VGS = 4.5 V, ID = 2.4 A
N-Ch
0.3
Gate-Source Charge
Qgs
P-Channel
P-Ch
0.4
nC
VDS = –10 V, VGS = –4.5 V, ID = –1.8 A
N-Ch
0.4
Gate-Drain Charge
Qgd
P-Ch
0.6
N-Ch
10
17
Turn-On Delay Time
td(on)
P-Ch
11
17
N-Channel
W
N-Ch
30
50
Rise Time
tr
VDD = 10 V, RL = 10 W
ID ^ 1 A, VGEN = 4.5 V, RG = 6 W
P-Ch
34
50
P-Channel
W
N-Ch
14
25
Turn-Off Delay Time
td(off)
P-Channel
VDD = –10 V, RL = 10 W
I
^ –1 A, V
= –4.5 V, R = 6
W
P-Ch
19
30
ns
ID ^ –1 A, VGEN = –4.5 V, RG = 6 W
N-Ch
6
12
Fall Time
tf
P-Ch
24
36
Source-Drain
IF = 1.05 A, di/dt = 100 A/ms
N-Ch
30
50
Source-Drain
Reverse Recovery Time
trr
IF = –1.05 A, di/dt = 100 A/ms
P-Ch
20
40
Notes
a.
Pulse test; pulse width
v 300 ms, duty cycle v 2%.
b.
Guaranteed by design, not subject to production testing.


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