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SI3585DV Datasheet(PDF) 1 Page - Vaishali Semiconductor

Part No. SI3585DV
Description  N- and P-Channel 20-V (D-S) MOSFET
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Manufacturer  VAISH [Vaishali Semiconductor]
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SI3585DV Datasheet(HTML) 1 Page - Vaishali Semiconductor

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Si3585DV
Vishay Siliconix
Document Number: 71184
S-03512—Rev. B, 04-Apr-01
www.vishay.com
1
N- and P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)
0.125 @ VGS = 4.5 V
2.4
N-Channel
20
0.200 @ VGS = 2.5 V
1.8
0.200 @ VGS = –4.5 V
–1.8
P-Channel
–20
0.340 @ VGS = –2.5 V
–1.2
D1
G1
S1
N-Channel MOSFET
S2
G2
D2
P-Channel MOSFET
TSOP-6
Top View
6
4
1
2
3
5
2.85 mm
3 mm
D2
G2
S1
S2
D1
G1
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
N-Channel
P-Channel
Parameter
Symbol
10 secs
Steady State
10 secs
Steady State
Unit
Drain-Source Voltage
VDS
20
–20
Gate-Source Voltage
VGS
"12
"12
V
_
TA = 25_C
2.4
2.0
–1.8
–1.5
Continuous Drain Current (TJ = 150_C)a
TA = 70_C
ID
1.7
1.4
–1.3
–1.2
Pulsed Drain Current
IDM
8
–7
A
Continuous Source Current (Diode Conduction)a
IS
1.05
0.75
–1.05
–0.75
TA = 25_C
1.15
0.83
1.15
0.83
Maximum Power Dissipationa
TA = 70_C
PD
0.59
0.53
0.59
0.53
W
Operating Junction and Storage Temperature Range
TJ, Tstg
–55 to 150
_C
THERMAL RESISTANCE RATINGS
N-Channel
P-Channel
Parameter
Symbol
Typ
Max
Typ
Max
Unit
t
v 10 sec
93
110
93
110
Maximum Junction-to-Ambienta
Steady State
RthJA
130
150
130
150
_C/W
Maximum Junction-to-Foot (Drain)
Steady State
RthJF
75
90
75
90
C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.


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