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RN1904 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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RN1904 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 7 page RN1901~RN1906 2001-06-07 1 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1901,RN1902,RN1903 RN1904,RN1905,RN1906 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l Including two devices in US6 (ultra super mini type with 6 leads) l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN2901~RN2906 Equivalent Circuit and Bias Resistor Values Equivalent Circuit (Top View) Maximum Ratings (Ta = 25 °°°°C) (Q1, Q2 Common) Characteristic Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage RN1901~1906 VCEO 50 V RN1901~1904 10 Emitter-base voltage RN1905, 1906 VEBO 5 V Collector current IC 100 mA Collector power dissipation PC* 200 mW Junction temperature Tj 150 °C Storage temperature range RN1901~1906 Tstg −55~150 °C *: Total rating JEDEC ― EIAJ ― TOSHIBA 2-2J1A Weight: 6.8mg Type No. R1 (kΩ)R2 (kΩ) RN1901 4.7 4.7 RN1902 10 10 RN1903 22 22 RN1904 47 47 RN1905 2.2 47 RN1906 4.7 47 Unit: mm |
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Similar Description - RN1904 |
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