K6F8016R6D-F datasheet(4/9 Pages) SAMSUNG

Part #	K6F8016R6D-F

Description	512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

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Manufacturer	SAMSUNG [Samsung semiconductor]

Direct Link	http://www.samsung.com/Products/Semiconductor

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4 / 9 page

K6F8016R6D Family

Revision 0.1

September 2004

4

CMOS SRAM

Preliminary

RECOMMENDED DC OPERATING CONDITIONS1)

Note:

1. TA=-40 to 85

°C, otherwise specified.

2. Overshoot: VCC+1.0V in case of pulse width

≤20ns.

3. Undershoot: -1.0V in case of pulse width

≤20ns.

4. Overshoot and undershoot are sampled, not 100% tested.

Item

Symbol

Min

Typ

Max

Unit

Supply voltage

Vcc

1.65

1.8

1.95

V

Ground

Vss

0

V

Input high voltage

VIH

1.4

-

Vcc+0.22)

V

Input low voltage

VIL

-0.23)

-0.4

V

CAPACITANCE1) (f=1MHz, TA=25°C)

1. Capacitance is sampled, not 100% tested.

Item

Symbol

Test Condition

Min

Max

Unit

Input capacitance

CIN

VIN=0V

-

8

pF

Input/Output capacitance

CIO

VIO=0V

-

10

pF

DC AND OPERATING CHARACTERISTICS

1. Typical values are measured at VCC=2.0V, TA=25

°C and not 100% tested.

Item

Symbol

Test Conditions

Min

Typ1)

Max

Unit

Input leakage current

ILI

VIN=Vss to Vcc

-1

-

1

µA

Output leakage current

ILO

CS1=VIH, CS2=VIL or OE=VIH or WE=VIL, VIO=Vss to Vcc

-1

-

1

µA

Average operating current

ICC1

Cycle time=1

µs, 100%duty, IIO=0mA, CS1≤0.2V,

CS2

≥Vcc-0.2V, VIN≤0.2V or VIN≥VCC-0.2V

--

2

mA

ICC2

Cycle time=Min, IIO=0mA, 100% duty, CS1=VIL, CS2=VIH,

LB=VIL or/and UB=VIL, VIN=VIL or VIH

--

17

mA

Output low voltage

VOL

IOL = 0.1mA

-

0.2

V

Output high voltage

VOH

IOH = -0.1mA

1.4

-

V

Standby Current(CMOS)

ISB1

Other input =0~Vcc

1) CS1

≥Vcc-0.2V, CS2≥Vcc-0.2V(CS1 controlled) or

2) 0V

≤CS2≤0.2V(CS2 controlled)

-0.5

10

µA

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