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Document Number: 69953

S09-0136-Rev. B, 02-Feb-09

Vishay Siliconix

Si4835DDY

New Product

Notes:

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

- 30

V

ΔV

- 31

mV/°C

ΔV

5.5

Gate-Source Threshold Voltage

- 1.0

- 3.0

V

Gate-Source Leakage

± 100

nA

Zero Gate Voltage Drain Current

- 1

µA

- 5

- 30

A

0.014

0.018

Ω

0.0245

0.030

23

S

Input Capacitance

1960

pF

Output Capacitance

380

Reverse Transfer Capacitance

325

Total Gate Charge

43

65

nC

22

33

Gate-Source Charge

6

Gate-Drain Charge

11

Gate Resistance

f = 1 MHz

0.3

1.3

2.5

Ω

Turn-On Delay Time

11

22

ns

Rise Time

13

25

Turn-Off DelayTime

32

50

Fall Time

918

Turn-On Delay Time

44

70

Rise Time

100

160

Turn-Off DelayTime

28

50

Fall Time

15

30

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

- 4.6

A

Pulse Diode Forward Current

- 50

Body Diode Voltage

- 0.75

- 1.2

V

Body Diode Reverse Recovery Time

28

45

ns

Body Diode Reverse Recovery Charge

20

40

nC

Reverse Recovery Fall Time

13

ns

Reverse Recovery Rise Time

15