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SI4835DDY Datasheet(PDF) 4 Page - Vishay Siliconix |
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SI4835DDY Datasheet(HTML) 4 Page - Vishay Siliconix |
4 / 9 page www.vishay.com 4 Document Number: 69953 S09-0136-Rev. B, 02-Feb-09 Vishay Siliconix Si4835DDY New Product TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) 1 0.01 0.001 0.1 10 100 TJ = 25 °C TJ = 150 °C - 0.4 - 0.2 0.0 0.2 0.4 0.6 0.8 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ - Temperature (°C) ID =5mA On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0.00 0.02 0.04 0.06 0.08 0.10 02 4 6 8 10 VGS - Gate-to-Source Voltage (V) TJ = 25 °C TJ = 125 °C ID =10A 0 10 20 30 40 50 Time (s) 10 1000 0.1 0.01 0.001 100 1 Safe Operating Area 0.01 1 100 0.01 0.1 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 1ms 10 ms 100 ms 0.1110 10 TA = 25 °C Single Pulse Limited byRDS(on)* 1s 10 s DC 100 |
Similar Part No. - SI4835DDY_17 |
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Similar Description - SI4835DDY_17 |
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