SI4431CDY_17 datasheet(5/9 Pages) VISHAY

Part #	SI4431CDY

Description	P-Channel 30-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Vishay Siliconix

Si4431CDY

Document Number: 68748

S09-0322-Rev. B, 02-Mar-09

www.vishay.com

5

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package

limit.

Current Derating*

0

2

4

6

8

10

0

25

50

75

100

125

150

T C - Case Temperature (°C)

Power, Junction-to-Foot

0

1

2

3

4

5

0

25

50

75

100

125

150

TC - Case Temperature (°C)

Power Derating, Junction-to-Ambient

0.0

0.5

1.0

1.5

2.0

2.5

3.0

0

25

50

75

100

125

150

TA -Ambient Temperature (°C)

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SI4431CDY Datasheet(PDF) 5 Page - Vishay Siliconix

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