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SiC462 Datasheet(PDF) 10 Page - Vishay Siliconix |
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SiC462 Datasheet(HTML) 10 Page - Vishay Siliconix |
10 / 29 page SiC461, SiC462, SiC463, SiC464 www.vishay.com Vishay Siliconix S18-0393-Rev. K, 16-Apr-18 10 Document Number: 65124 For technical questions, contact: powerictechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Pre-Bias Start-Up In case of pre-bias startup, output is monitored through FB pin. If the sensed voltage on FB is higher than the internal reference ramp value, control logic prevents high side and low side MOSFETs from switching to avoid negative output voltage spike and excessive current sinking through low side MOSFET. Fig. 8 - Pre-Bias Start-Up Fig. 9 - PGOOD Window Power Good SiC46x’s power good is an open-drain output. Pull PGOOD pin high through a > 10K resistor to use this signal. Power good window is shown in the below diagram. If voltage on FB pin is out of this window, PGOOD signal is de-asserted by pulling down to AGND. To prevent false triggering during transient events, PGOOD has a 25 μs blanking time. EXAMPLE SCHEMATIC OF SiC462 Fig. 10 - SiC462 Configured for 6 V to 60 V Input, 5 V Output at 6 A, 500 kHz Operation with Ultrasonic Power Save Mode Enabled all Ceramic Output Capacitance Design Vref (0.8 V) VFB VFB_Rising_Vth_OV (typ. = 0.96 V) VFB_Falling_Vth_OV (typ. = 0.91 V) VFB_Falling_Vth_UV (typ. = 0.72 V) VFB_Rising_Vth_UV (typ. = 0.77 V) PG Pull-high Pull-low SiC462 U1 PGND 17 AGND-PAD 28 VCIN 1 PGND3 11 PGND2 10 PGND1 9 VIN2 8 VIN1 7 COMP 21 VFB 22 AGND 23 fsw 24 ILIMIT 25 VDD 26 MODE 27 PGND-PAD 30 VIN-PAD 29 R_EN_L R_fsw RLIM R_EN_H Css R_FB_H R_FB_L R_PGD Rx Cx Cy CVDRV C VDD CIN COUT2 COUT RCOMP CCOMP Notes in small black text near component values refer to Vishay SiC46X spreadsheet calcualtor references. +V IN = 6 V to 60 V RMODE CIN2 PG L +V OUT = 5 V P GND Zero ohm ultrasonic select EN Analog ground (A GND), and power ground (P GND) are tied internally in the SiC46X A GND A GND P GND 560K 102K DNP 33 nF 2K 1 μF 60.4K 0.1 μF 52.3K 47 μF 10K 4.7 μF 470 pF 232K 52.3K 128 μF 0.1 μF 4.7 μH 8.66K 2.2 nF 1.8 nF |
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