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DG636EEQ-T1-GE4 Datasheet(PDF) 4 Page - Vishay Siliconix

Part # DG636EEQ-T1-GE4
Description  0.3 pC Charge Injection, 100 pA Leakage CMOS ± 5 V / 5 V / 3 V Dual SPDT Analog Switch
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

DG636EEQ-T1-GE4 Datasheet(HTML) 4 Page - Vishay Siliconix

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DG636E
www.vishay.com
Vishay Siliconix
S17-1518-Rev. B, 09-Oct-17
4
Document Number: 75621
For technical questions, contact: analogswitchtechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings
b. All leads welded or soldered to PC board
c. Derate 5.6 mW/°C above 70 °C
d. Derate 6.6 mW/°C above 70 °C
e. Manual soldering with iron is not recommended for leadless components. The miniQFN-16 is a leadless package. The end of the lead
terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper lip
cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection
Power Supply
Power supply current
I+
VIN = 0 V or V+
Room
0.0004
-
0.5
-
0.5
μA
Full
-
-
1
-
1
Negative supply
current
I-
Room
-0.0004
-0.5
-
-0.5
-
Full
-
-1
-
-1
-
Ground current
IGND
Room
-0.0004
-0.5
-
-0.5
-
Full
-
-1
-
-1
-
SPECIFICATIONS FOR DUAL SUPPLIES (V+ = 5 V, V- = -5 V)
PARAMETER
SYMBOL
TEST CONDITIONS
UNLESS OTHERWISE
SPECIFIED
V+ = 5 V, V- = -5 V
VIN A0, A1, AND ENABLE = 2 V, 0.8 V a
TEMP.b
TYP. c
-40 °C to +125 °C
-40 °C to +85 °C
UNIT
MIN. d
MAX. d
MIN. d
MAX. d


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