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2SK3374 Datasheet(PDF) 5 Page - Toshiba Semiconductor

Part No. 2SK3374
Description  TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV)
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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 5 page
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2SK3374
2002-08-09
5
rth - tw
Safe operating area
EAS - Tch
Pulse width tw (S)
Channel temperature (initial) Tch (°C)
-15 V
15 V
Test circuit
Wave form
IAR
BVDSS
VDD
VDS
RG = 25 W
VDD = 90 V, L = 203 mH
÷
÷
ø
ö
ç
ç
è
æ
-
×
×
×
=
VDD
BVDSS
BVDSS
2
I
L
2
1
ΕAS
0.001
0.1
1
3
0.3
0.01
10
m
100
m
1 m
10 m
1
10
100
T
PDM
t
Duty
= t/T
Rth (ch-a) = 96.1°C/W
Duty
= 0.5
0.1
Single Pulse
0.02
0.0005
0.003
0.03
0.05
0.5
100 m
0.01
0.05
0.2
0.001
0.1
0.01
0.1
1
10
10
100
1000
*: Single nonrepetitive pulse
Ta
= 25°C
Curves must be derated
linearly with increase in
temperature.
ID max (continuous)
ID max (pulsed) *
100
ms *
DC operation
Ta
= 25°C
1 ms *
VDSS max
1
0
25
30
60
90
150
120
50
75
100
125
150
Drain-source voltage VDS (V)




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