Si3459BDV datasheet(5/11 Pages) VISHAY

Part #	Si3459BDV

Description	P-Channel 60-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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5 / 11 page

Document Number: 69954

S09-0765-Rev. B, 04-May-09

www.vishay.com

5

Vishay Siliconix

Si3459BDV

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package

limit.

Current Derating*

0

1

2

3

4

0

25

50

75

100

125

150

TC - Case Temperature (°C)

Power Junction-to-Case

0

1

2

3

4

0

25

50

75

100

125

150

TC - Case Temperature (°C)

Power Junction-to-Ambient

0.0

0.3

0.6

0.9

1.2

1.5

0

25

50

75

100

125

150

TA -Ambient Temperature (°C)

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Si3459BDV Datasheet(PDF) 5 Page - Vishay Siliconix

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