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Document Number: 69501

S09-0660-Rev. B, 20-Apr-09

Vishay Siliconix

Si3458BDV

Notes:

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2 %

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

60

V

ΔV

60

mV/°C

ΔV

- 6

Gate-Source Threshold Voltage

1.5

3

V

Gate-Source Leakage

± 100

nA

Zero Gate Voltage Drain Current

1

µA

10

10

A

0.082

0.100

Ω

0.105

0.128

12

S

Input Capacitance

350

pF

Output Capacitance

40

Reverse Transfer Capacitance

20

Total Gate Charge

7.1

11

nC

3.5

5.5

Gate-Source Charge

1.1

Gate-Drain Charge

0.95

Gate Resistance

f = 1 MHz

2.3

3.5

Ω

Turn-On Delay Time

16

25

ns

Rise Time

17

30

Turn-Off Delay Time

12

20

Fall Time

10

15

Turn-On Delay Time

510

Rise Time

12

20

Turn-Off Delay Time

18

30

Fall Time

10

15

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

2.9

A

Pulse Diode Forward Current

10

Body Diode Voltage

0.8

1.2

V

Body Diode Reverse Recovery Time

25

50

ns

Body Diode Reverse Recovery Charge

40

80

nC

Reverse Recovery Fall Time

22

ns

Reverse Recovery Rise Time

3