Document Number: 91221

www.vishay.com

S11-0448-Rev. C, 14-Mar-11

3

This datasheet is subject to change without notice.

IRFP32N50K, SiHFP32N50K

Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Fig. 1 - Typical Output Characteristics

Fig. 2 - Typical Output Characteristics

Fig. 3 - Typical Transfer Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

VDS, Drain-to-Source Voltage (V)

0.1

1

10

100

0.01

0.1

1

10

1000

VGS

15 V

12 V

10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

Top

Bottom

5.0 V

20

μs PULSE WIDTH

TJ = 25 °C

100

VGS

15 V

12 V

10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

Bottom

Top

5.0 V

20

μs PULSE WIDTH

TJ = 150 °C

0.1

1

10

100

VDS, Drain-to-Source Voltage (V)

0.1

1

10

100

5

4

8

7

911

12

0.1

100

1000

VGS, Gate-to-Source Voltage (V)

10

1

VDS = 50 V

20

μs PULSE WIDTH

TJ = 25 °C

TJ = 150 °C

TJ, Junction Temperature

- 60

- 20

- 40

0

20 40

60

80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

2.5

3.0

ID = 32 A

VGS = 10 V