 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
IRFB17N50L Datasheet(PDF) 7 Page - Vishay Siliconix |
|
||||||||||||||||||||||||||||||
IRFB17N50L Datasheet(HTML) 7 Page - Vishay Siliconix |
|
|
7 / 9 page 
Document Number: 91098 www.vishay.com S11-0514-Rev. B, 21-Mar-11 7 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFB17N50L, SiHFB17N50L Vishay Siliconix Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91098. P.W. Period dI/dt Diode recovery dV/dt Ripple ≤ 5 % Body diode forward drop Re-applied voltage Reverse recovery current Body diode forward current V GS = 10 V a I SD Driver gate drive D.U.T. l SD waveform D.U.T. V DS waveform Inductor current D = P.W. Period + - + + + - - - Peak Diode Recovery dV/dt Test Circuit V DD • dV/dt controlled by R g • Driver same type as D.U.T. • I SD controlled by duty factor “D” • D.U.T. - device under test D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer R g Note a. V GS = 5 V for logic level devices V DD |
|
English ▼
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
