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SiHF840A Datasheet(PDF) 2 Page - Vishay Siliconix |
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SiHF840A Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 9 page www.vishay.com Document Number: 91065 2 S11-0506-Rev. B, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF840A, SiHF840A Vishay Siliconix Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 μs; duty cycle 2 %. c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient RthJA -62 °C/W Case-to-Sink, Flat, Greased Surface RthCS 0.50 - Maximum Junction-to-Case (Drain) RthJC -1.0 SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 500 - - V VDS Temperature Coefficient V DS/TJ Reference to 25 °C, ID = 1 mA - 0.58 - V/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V Gate-Source Leakage IGSS VGS = ± 30 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 500 V, VGS = 0 V - - 25 μA VDS = 400 V, VGS = 0 V, TJ = 125 °C - - 250 Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 4.8 Ab -- 0.85 Forward Transconductance gfs VDS = 50 V, ID = 4.8 Ab 3.7 - - S Dynamic Input Capacitance Ciss VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 - 1018 - pF Output Capacitance Coss - 155 - Reverse Transfer Capacitance Crss -8.0 - Output Capacitance Coss VGS = 0 V; VDS = 1.0 V, f = 1.0 MHz 1490 Output Capacitance Coss VGS = 0 V; VDS = 400 V, f = 1.0 MHz 42 Effective Output Capacitance Coss eff. VGS = 0 V; VDS = 0 V to 400 Vc 56 Total Gate Charge Qg VGS = 10 V ID = 8 A, VDS = 400 V, see fig. 6 and 13b -- 38 nC Gate-Source Charge Qgs -- 9.0 Gate-Drain Charge Qgd -- 18 Turn-On Delay Time td(on) VDD = 250 V, ID = 8 A Rg = 9.1 , RD = 31, see fig. 10b -11 - ns Rise Time tr -23 - Turn-Off Delay Time td(off) -26 - Fall Time tf -19 - Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS MOSFET symbol showing the integral reverse p - n junction diode -- 8.0 A Pulsed Diode Forward Currenta ISM -- 32 Body Diode Voltage VSD TJ = 25 °C, IS = 8 A, VGS = 0 Vb -- 2.0 V Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = 8 A, dI/dt = 100 A/μsb - 422 633 ns Body Diode Reverse Recovery Charge Qrr - 2.16 3.24 μC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) S D G |
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