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SiHF9Z24 Datasheet(PDF) 4 Page - Vishay Siliconix |
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SiHF9Z24 Datasheet(HTML) 4 Page - Vishay Siliconix |
4 / 9 page www.vishay.com Document Number: 91090 4 S11-0513-Rev. B, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF9Z24, SiHF9Z24 Vishay Siliconix Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating Area 1250 1000 750 500 0 250 100 101 - VDS, Drain-to-Source Voltage (V) C iss C rss C oss V GS = 0 V, f = 1 MHz C iss = Cgs + Cgd, Cds Shorted C rss = Cgd C oss = Cds + Cgd 91090_05 QG, Total Gate Charge (nC) 20 16 12 8 0 4 0 5 25 20 15 10 V DS = - 30 V For test circuit see figure 13 V DS = - 48 V 91090_06 I D = - 11 A 101 100 - VSD, Source-to-Drain Voltage (V) 0.5 4.5 3.5 2.5 1.5 25 °C 175 °C V GS = 0 V 91090_07 10-1 5.5 100 µs 1 ms 10 ms Operation in this area limited by R DS(on) - VDS, Drain-to-Source Voltage (V) T C = 25 °C T J = 175 °C Single Pulse 102 0.1 0.1 2 5 1 2 5 10 2 5 25 1 25 10 25 102 25 103 91090_08 10 µs |
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