DXT751Q datasheet(3/6 Pages) DIODES

Part #	DXT751Q

Description	60V PNP LOW SATURATION POWER TRANSISTOR

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Manufacturer	DIODES [Diodes Incorporated]

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3 / 6 page

DXT751Q

Document Number: DS39215 Rev: 1 - 2

3 of 6

www.diodes.com

November 2016

DXT751Q

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Conditions

OFF CHARACTERISTICS

Collector-Base Breakdown Voltage

BVCBO

-80



V

IC = -100µA

Collector-Emitter Breakdown Voltage (Note 9)

BVCEO

-60



V

IC = -10mA

Emitter-Base Breakdown Voltage

BVEBO

-5



V

IE = -100µA

Collector-Base Cutoff Current

ICBO



-0.1

-10

µA

VCB = -60V

VCB = -60V, TA = +100°C

Emitter-Base Cutoff Current

IEBO



-0.1

µA

VEB = -4V

ON CHARACTERISTICS (Note 9)

Collector-Emitter Saturation Voltage

VCE(sat)



-0.08

-0.2

-0.3

-0.6

V

IC = -1A, IB = 100mA

IC = -3A, IB = 300mA

Base-Emitter Saturation Voltage

VBE(sat)



-0.90

-1.25

V

IC = -1A, IB = -100mA

Base-Emitter Turn-On Voltage

VBE(on)



-0.8

-1

V

VCE = -2V, IC = -1A

DC Current Gain

hFE

70

100

80

40

200

180

160

140



300





VCE = -2V, IC = -50mA

VCE = -2V, IC = -500mA

VCE = -2V, IC = -1A

VCE = -2V, IC = -2A

SMALL-SIGNAL CHARACTERISTICS

Transition Frequency

fT

100

145



MHz

VCE = -10V, IC = -50mA, f = 100MHz

Output Capacitance

Cobo





30

pF

VCB = -10V, f = 1MHz

Switching Times

ton

toff



45

200





ns

VCC = -10V. IC = -500mA,

IB1 = -IB2 = -50mA

Note:

9.

Measured under pulsed conditions. Pulse width ≤ 300μs. Duty cycle ≤ 2%.

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