DXT651Q

Document Number: DS38910 Rev: 1 - 2

2 of 6

www.diodes.com

July 2016

© Diodes Incorporated

DXT651Q

Characteristic

Symbol

Value

Unit

Collector-Base Voltage

80

V

Collector-Emitter Voltage

60

V

Emitter-Base Voltage

5

V

Collector Current

3

A

Peak Pulse Collector Current

6

A

Peak Base Current

500

mA

Characteristic

Symbol

Value

Unit

Power Dissipation

(Note 6)

1

W

(Note 7)

2

Thermal Resistance, Junction to Ambient Air

(Note 6)

125

C/W

(Note 7)

62.5

Thermal Resistance, Junction to Leads

(Note 8)

6.0

C/W

Operating and Storage Temperature Range

-55 to +150

C

Notes:

6. For a device surface mounted on 15mm x 15mm x 0.6mm FR-4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the device is

measured when operating in steady state condition.

7. Same as note 6, except the device is mounted on 40mm x 40mm x 1.6mm FR-4 PCB.

8. Thermal resistance from junction to solder-point (on the exposed collector pad).

Thermal Characteristics and Derating Information

0

25

50

75

100

125

150

0.0

0.2

0.4

0.6

0.8

1.0

Derating Curve

Temperature (

o

C)

100μ

1m

10m 100m

1

10

100

1k

0

20

40

60

80

100

120

Transient Thermal Impedance

D=0.5

D=0.2

D=0.1

Single Pulse

D=0.05

Pulse Width (s)

100μ

1m

10m 100m

1

10

100

1k

1

10

100

Single Pulse. T

A

=25

Pulse Power Dissipation

Pulse Width (s)

100



100

