PRELIMINARY
CY7C1370D
CY7C1372D
Document #: 38-05555 Rev. *A
Page 8 of 30
outputs are active. The Output Enable (OE) can be deasserted
HIGH
before
presenting
data
to
the
DQ and
DQP
(DQa,b,c,d/DQPa,b,c,d for CY7C1370D and DQa,b/DQPa,b for
CY7C1372D) inputs. Doing so will three-state the output
drivers. As a safety precaution, DQ and DQP (DQa,b,c,d/
DQPa,b,c,d
for
CY7C1370D
and
DQa,b/DQPa,b
for
CY7C1372D) are automatically three-stated during the data
portion of a write cycle, regardless of the state of OE.
Burst Write Accesses
The CY7C1370D/CY7C1372D has an on-chip burst counter
that allows the user the ability to supply a single address and
conduct up to four write operations without reasserting the
address inputs. ADV/LD must be driven LOW in order to load
the initial address, as described in the Single Write Access
section above. When ADV/LD is driven HIGH on the subse-
quent clock rise, the chip enables (CE1, CE2, and CE3) and
WE inputs are ignored and the burst counter is incremented.
The correct BW (BWa,b,c,d for CY7C1370D and BWa,b for
CY7C1372D) inputs must be driven in each cycle of the burst
write in order to write the correct bytes of data.
Sleep Mode
The ZZ input pin is an asynchronous input. Asserting ZZ
places the SRAM in a power conservation “sleep” mode. Two
clock cycles are required to enter into or exit from this “sleep”
mode. While in this mode, data integrity is guaranteed.
Accesses pending when entering the “sleep” mode are not
considered valid nor is the completion of the operation
guaranteed. The device must be deselected prior to entering
the “sleep” mode. CE1, CE2, and CE3, must remain inactive
for the duration of tZZREC after the ZZ input returns LOW.
Interleaved Burst Address Table
(MODE = Floating or VDD)
First
Address
Second
Address
Third
Address
Fourth
Address
A1,A0
A1,A0
A1,A0
A1,A0
00
01
10
11
01
00
11
10
10
11
00
01
11
10
01
00
Linear Burst Address Table (MODE = GND)
First
Address
Second
Address
Third
Address
Fourth
Address
A1,A0
A1,A0
A1,A0
A1,A0
00
01
10
11
01
10
11
00
10
11
00
01
11
00
01
10
ZZ Mode Electrical Characteristics
Parameter
Description
Test Conditions
Min.
Max
Unit
IDDZZ
Sleep mode standby current
ZZ
> V
DD − 0.2V
80
mA
tZZS
Device operation to ZZ
ZZ
> V
DD − 0.2V
2tCYC
ns
tZZREC
ZZ recovery time
ZZ
< 0.2V
2tCYC
ns
tZZI
ZZ active to sleep current
This parameter is sampled
2tCYC
ns
tRZZI
ZZ Inactive to exit sleep current
This parameter is sampled
0
ns