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LM95221 Datasheet(PDF) 4 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor. Click here to check the latest version.
Part No. LM95221
Description  Dual Remote Diode Digital Temperature Sensor with SMBus Interface
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Maker  NSC [National Semiconductor (TI)]
Homepage  http://www.national.com
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LM95221 Datasheet(HTML) 4 Page - National Semiconductor (TI)

 
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Absolute Maximum Ratings (Note 1)
Supply Voltage
−0.3 V to 6.0 V
Voltage at SMBDAT, SMBCLK
−0.5V to 6.0V
Voltage at Other Pins
−0.3 V to (V
DD + 0.3 V)
D− Input Current
±1mA
Input Current at All Other Pins (Note 2)
±5mA
Package Input Current (Note 2)
30 mA
SMBDAT Output Sink Current
10 mA
Storage Temperature
−65˚C to +150˚C
Soldering Information, Lead Temperature
MSOP-8 Package (Note 3)
Vapor Phase (60 seconds)
215˚C
Infrared (15 seconds)
220˚C
ESD Susceptibility (Note 4)
Human Body Model
2000 V
Machine Model
200 V
Operating Ratings
(Notes 1, 5)
Operating Temperature Range
0˚C to +115˚C
Electrical Characteristics
Temperature Range
T
MIN
≤T
A
≤T
MAX
LM95221CIMM
0˚C
≤T
A
≤+85˚C
Supply Voltage Range (V
DD)
+3.0V to +3.6V
Temperature-to-Digital Converter Characteristics
Unless otherwise noted, these specifications apply for V
DD=+3.0Vdc to 3.6Vdc. Boldface limits apply for TA =TJ =
T
MIN
≤T
A
≤T
MAX; all other limits TA=TJ=+25˚C, unless otherwise noted. TJ is the junction temperature of the LM95221. TD is the
junction temperature of the remote thermal diode.
Parameter
Conditions
Typical
Limits
Units
(Note 6)
(Note 7)
(Limit)
Accuracy Using Local Diode
T
A = 0˚C to +85˚C, (Note 8)
±1
±3
˚C (max)
Accuracy Using Remote Diode, see (Note 9) for
Thermal Diode Processor Type.
T
A = +30˚C to
+50˚C
T
D = +45˚C
to +85˚C
±1
˚C (max)
T
A = +0˚C to
+85˚C
T
D = +25˚C
to +140˚C
±3
˚C (max)
Remote Diode Measurement Resolution
11
Bits
0.125
˚C
Local Diode Measurement Resolution
10
Bits
0.25
˚C
Conversion Time of All Temperatures at the
Fastest Setting
(Note 11)
66
73
ms (max)
Quiescent Current (Note 10)
SMBus Inactive, 15Hz conversion
rate
2.0
2.6
mA (max)
Shutdown
335
µA
D− Source Voltage
0.7
V
Diode Source Current
(D+ − D−)=+ 0.65V; high-level
188
315
µA (max)
110
µA (min)
Low-level
11.75
20
µA (max)
7
µA (min)
Low-Level Diode Source Current Variation over
Temperature
T
A = +30˚C to +50˚C
+0.5
µA
T
A = +30˚C to +85˚C
+1.5
µA
Power-On Reset Threshold
Measure on V
DD input, falling
edge
2.4
1.8
V (max)
V (min)
www.national.com
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