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NTE313 Datasheet(PDF) 1 Page - NTE Electronics |
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NTE313 Datasheet(HTML) 1 Page - NTE Electronics |
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NTE313 Silicon NPN Transistor High Gain, Low Noise, VHF Mixer and VHF/RF Amp Description: The NTE 313 is a silicon NPN transistor specifically designed for VHF mixer and VHF/RF amplifier applications. This device features high power gain, low noise, and excellent forward AGC characteristics. Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO 30V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Collector–Emitter Voltage, VCEO 30V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Emitter–Base Voltage, VEBO 4V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Collector Current, IC 20mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Total Power Dissipation, PT 150mW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Maximum Junction Temperature, TJ +150 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Storage Temperature Range, Tstg –60 ° to +150°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current ICBO VCB = 20V, IE = 0 – – 0.2 µA DC Current Gain hFE VCE = 10V, IC = 2mA 20 60 200 Current–Gain Bandwidth Product fT VCE = 10V, IE = –2mA 400 530 – MHz Output Capacitance Cob VCB = 10V, IE = 0, f = 1MHz – 0.5 1.0 pF Noise Figure NF IE = –2mA, f = 200MHz – 2.5 3.3 dB Power Gain PG IE = –2mA, f = 200MHz 20 23 – dB AGC Current IAGC PG = –30dB – –9 –11 mA |
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