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FCAS50SN60 Datasheet(PDF) 5 Page - Fairchild Semiconductor

Part No. FCAS50SN60
Description  Smart Power Module for SRM
Download  16 Pages
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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FCAS50SN60 Datasheet(HTML) 5 Page - Fairchild Semiconductor

 
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FCAS50SN60 Rev. A
Absolute Maximum Ratings (T
J = 25°C, Unless Otherwise Specified)
Inverter Part
Note:
1. The maximum junction temperature rating of the power chips integrated within the module is 150
°C(@TC ≤ 100°C). However, to insure safe operation, the average junction
temperature should be limited to TJ(ave) ≤ 125°C (@TC ≤ 100°C)
Control Part
Total System
Thermal Resistance
Note:
2. For the measurement point of case temperature (TC), please refer to Figure 2.
Symbol
Parameter
Conditions
Rating
Units
VPN(Surge)
Supply Voltage (Surge)
Applied between P- NA, NB1, NB2
550
V
VCES
Collector-emitter Voltage
600
V
± IC
Each IGBT Collector Current
TC = 25°C
50
A
± ICP
Each IGBT Collector Current (Peak)
TC = 25°C, Under 1ms Pulse Width
100
A
PC
Collector Dissipation
TC = 25°C per One IGBT
110
W
TJ
Operating Junction Temperature
(Note 1)
-20 ~ 125
°C
Symbol
Parameter
Conditions
Rating
Units
VCC
Control Supply Voltage
Applied between VCC(H), VCC(L) - COM
20
V
VBS
High-side Control Bias Voltage
Applied between VB - VS
20
V
VIN
Input Signal Voltage
Applied between IN(H), IN(L) - COM
-0.3~5.5
V
VFO
Fault Output Supply Voltage
Applied between VFO - COM
-0.3~VCC+0.3
V
IFO
Fault Output Current
Sink Current at VFO Pin
5
mA
VSC
Current Sensing Input Voltage
Applied between CSC - COM
-0.3~VCC+0.3
V
Symbol
Parameter
Conditions
Rating
Units
VPN(PROT)
Self Protection Supply Voltage Limit
(Short Circuit Protection Capability)
VCC = VBS = 13.5 ~ 16.5V
TJ = 125°C, Non-repetitive, less than 6µs
400
V
TC
Module Case Operation Temperature
-20 ~ 95
°C
TSTG
Storage Temperature
-40 ~ 125
°C
VISO
Isolation Voltage
60Hz, Sinusoidal, AC 1 minute, Connection
Pins to DBC
2500
Vrms
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Units
Rth(j-c)Q
Junction to Case Thermal
Resistance
Each IGBT under Operating Condition
-
-
0.90
°C/W
Rth(j-c)F
Each FWDi under Operating Condition
-
-
2.2
°C/W


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