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FM28V202A-TGTR Datasheet(PDF) 11 Page - Cypress Semiconductor

Part # FM28V202A-TGTR
Description  2-Mbit (128 K 횞 16) F-RAM Memory
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Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

FM28V202A-TGTR Datasheet(HTML) 11 Page - Cypress Semiconductor

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FM28V202A
Document Number: 001-90309 Rev. *G
Page 11 of 22
AC Switching Characteristics
Over the Operating Range
Parameters [3]
Description
VDD = 2.0 V to 2.7 V
VDD = 2.7 V to 3.6 V
Unit
Cypress
Parameter
Alt
Parameter
Min
Max
Min
Max
SRAM Read Cycle
tCE
tACE
Chip enable access time
70
60
ns
tRC
Read cycle time
105
90
ns
tAA
Address access time, A16-2
–105
90
ns
tOH
tOHA
Output hold time, A16-2
20
20
ns
tAAP
Page mode access time, A1-0
–40
30
ns
tOHP
Page mode output hold time, A1-0
3–
3
ns
tCA
Chip enable active time
70
60
ns
tPC
Pre-charge time
35
30
ns
tBA
tBW
UB, LB access time
25
15
ns
tAS
tSA
Address setup time (to CE LOW)
0–
0
ns
tAH
tHA
Address hold time (CE Controlled)
70
60
ns
tOE
tDOE
Output enable access time
25
15
ns
tHZ[4, 5]
tHZCE
Chip Enable to output HI-Z
15
10
ns
tOHZ[4, 5]
tHZOE
Output enable HIGH to output HI-Z
15
10
ns
tBHZ[4, 5]
tHZBE
UB, LB HIGHHIGH to output HI-Z
15
10
ns
Notes
3. Test conditions assume a signal transition time of 3 ns or less, timing reference levels of 0.5 × VDD, input pulse levels of 0 to 3 V, output loading of the specified
IOL/IOH and 30-pF load capacitance shown in AC Test Conditions on page 10.
4. tHZ, tOHZ and tBHZ are specified with a load capacitance of 5 pF. Transition is measured when the outputs enter a high impedance state.
5. This parameter is characterized but not 100% tested.


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