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IRFPG50 Datasheet(PDF) 2 Page - Vishay Siliconix |
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IRFPG50 Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 9 page www.vishay.com Document Number: 91254 2 S11-0441-Rev. B, 14-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFPG50, SiHFPG50 Vishay Siliconix Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 μs; duty cycle 2 %. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient RthJA -40 °C/W Case-to-Sink, Flat, Greased Surface RthCS 0.24 - Maximum Junction-to-Case (Drain) RthJC -0.65 SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 1000 - - V VDS Temperature Coefficient V DS/TJ Reference to 25 °C, ID = 1 mA - 1.2 - V/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 1000 V, VGS = 0 V - - 100 μA VDS = 800 V, VGS = 0 V, TJ = 125 °C - - 500 Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 3.6 Ab -- 2.0 Forward Transconductance gfs VDS = 100 V, ID = 3.6 Ab 5.4 - - S Dynamic Input Capacitance Ciss VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 - 2800 - pF Output Capacitance Coss - 250 - Reverse Transfer Capacitance Crss -84 - Total Gate Charge Qg VGS = 10 V ID = 6.1 A, VDS = 400 V, see fig. 6 and 13b - - 190 nC Gate-Source Charge Qgs -- 23 Gate-Drain Charge Qgd - - 110 Turn-On Delay Time td(on) VDD = 500 V, ID = 6.1 A, Rg = 6.2 , RD = 81, see fig. 10b -19 - ns Rise Time tr -35 - Turn-Off Delay Time td(off) - 130 - Fall Time tf -36 - Internal Drain Inductance LD Between lead, 6 mm (0.25") from package and center of die contact -5.0 - nH Internal Source Inductance LS -13 - Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS MOSFET symbol showing the integral reverse p - n junction diode -- 6.1 A Pulsed Diode Forward Currenta ISM -- 24 Body Diode Voltage VSD TJ = 25 °C, IS = 6.1 A, VGS = 0 Vb -- 1.8 V Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = 6.1 A, dI/dt = 100 A/μsb - 630 950 ns Body Diode Reverse Recovery Charge Qrr -3.5 5.3 μC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) D S G S D G |
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